H10P 30/226
At a temperature lower than room temperature
Official title: {at a temperature lower than room temperature}
H10P30/226 (At a temperature lower than room temperature) appears on 122 US grants and 131 published applications in this corpus.
Search patents in H10P- Granted patents
- 122
- Published applications
- 131
- Assignees
- 44
- Inventors
- 249
- Latest grant
- 18 Nov 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 2 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 2 | 2 |
| 2002 | 4 | 2 |
| 2003 | 2 | 3 |
| 2004 | 1 | 1 |
| 2005 | 2 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 1 |
| 2008 | 0 | 5 |
| 2009 | 0 | 6 |
| 2010 | 1 | 4 |
| 2011 | 8 | 12 |
| 2012 | 11 | 10 |
| 2013 | 5 | 17 |
| 2014 | 18 | 11 |
| 2015 | 10 | 15 |
| 2016 | 12 | 9 |
| 2017 | 7 | 6 |
| 2018 | 8 | 5 |
| 2019 | 5 | 3 |
| 2020 | 2 | 3 |
| 2021 | 1 | 2 |
| 2022 | 0 | 6 |
| 2023 | 5 | 3 |
| 2024 | 5 | 3 |
| 2025 | 4 | 2 |
By publication year. Applications have been published since 2001.
Recent patents
- Method of manufacturing a source/drain of a semiconductor device using multiple implantation processes18 Nov 2025US 12,477,764 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method for semiconductor device22 Jul 2025US 12,369,370 B2Fuji Electric Co., Ltd.
- Ion implantation method and ion implanter18 Mar 2025US 12,255,046 B2Sumitomo Heavy Industries Ion Technology Co., Ltd.
- Cryogenic packaging for thermalization of low temperature devices4 Feb 2025US 12,219,737 B2International Business Machines Corporation
- Low-temperature implant for buried layer formation10 Sep 2024US 12,087,585 B2APPLIED Materials.Inc.
- Source/Drain Structure of Semiconductor Device and Method of Forming Same6 Nov 2025US 2025/0344425 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Backside implant for wafer curvature control15 May 2025US 2025/0157821 A1Axcelis Technologies, Inc.
- Source/Drain Structure of Semiconductor Device and Method of Forming Same21 Nov 2024US 2024/0387700 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method for semiconductor device16 May 2024US 2024/0162294 A1Fuji Electric Co., Ltd.
- Ion implantation method and ion implanter8 Feb 2024US 2024/0047176 A1Sumitomo Heavy Industries Ion Technology Co., Ltd.
Most cited
By later US patents
- Process of making semiconductors having shallow, hyperabrupt doped regions by implantation and two step annealing169US 4,617,066 AHughes Aircraft Company · 1986
- Method and device for controlled cleaving process100US 6,291,313 B1Silicon Genesis Corporation · 2001
- Solid phase epitaxy and regrowth process with controlled defect density profiling for heteroepitaxial semiconductor on insulator composite substrates75US 4,509,990 AHughes Aircraft Company · 1985
- Selective area double epitaxial process for fabricating silicon-on-insulator structures for use with MOS devices and integrated circuits72US 4,659,392 AHughes Aircraft Company · 1987
- Semiconductor integrated circuit device, method for producing the same, and ion implanter for use in the method60US 5,244,820 A1993