Method of manufacturing a source/drain of a semiconductor device using multiple implantation processes

A method comprising:

• forming a semiconductor fin extending from a substrate;
• forming a dummy gate stack over the semiconductor fin, the dummy gate stack overlapping the semiconductor fin in a plan view;
• etching the semiconductor fin to form a recess in the semiconductor fin;
• epitaxially growing a semiconductor material in the recess;
• performing a first implantation process on the semiconductor material, the first implantation process implanting first implants into the semiconductor material;
• after performing the first implantation process, performing a second implantation process on the semiconductor material, the second implantation process implanting second implants into the semiconductor material;
• and
• after performing the second implantation process, performing an anneal process on the semiconductor material, the anneal process forming a doped region in the semiconductor fin at an interface between the semiconductor material and the semiconductor fin, wherein the semiconductor material and the doped region extend into the semiconductor fin to a same depth.

A method comprising:

• forming a recess in a first semiconductor material;
• forming a second semiconductor material in the recess;
• performing a first implantation process on the second semiconductor material, wherein performing the first implantation process comprises implanting first dopants using a first implantation energy;
• performing a second implantation process on the second semiconductor material, wherein performing the second implantation process comprises implanting the first dopants using a second implantation energy different from the first implantation energy;
• and
• after performing the first implantation process and the second implantation process, performing an anneal process, the anneal process driving at least some of the first dopants from the first implantation process and at least some of the first dopants from the second implantation process into the first semiconductor material, wherein the first dopants implanted in the first implantation process and the first dopants implanted in the second implantation process are dopants of a same conductivity type.