Semiconductor device and manufacturing method for semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorsTakahiro Tamura, Yuichi Onozawa
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Abstract
Provided is a manufacturing method for a semiconductor device including a transistor portion and a diode portion. The manufacturing method includes forming, on an upper surface of a semiconductor substrate including a bulk donor, an emitter region of the transistor portion and an anode region of the diode portion as an active region, performing ion implantation of a first dopant of a first conductivity type to the transistor portion and the diode portion from a lower surface of the semiconductor substrate, and performing ion implantation of a second dopant of the first conductivity type to the transistor portion from the lower surface of the semiconductor substrate.
Claims4
A manufacturing method for a semiconductor device including a transistor portion and a diode portion, the manufacturing method comprising:
- forming, on an upper surface of a semiconductor substrate including a bulk donor, an emitter region of the transistor portion and an anode region of the diode portion as an active region;
- and
- performing ion implantation of a first dopant of a first conductivity type to the transistor portion and the diode portion from a lower surface of the semiconductor substrate, and performing ion implantation of a second dopant of the first conductivity type to the transistor portion from the lower surface of the semiconductor substrate, wherein
- a depth position to which the first dopant is implanted and a depth position to which the second dopant is implanted are the same.
Dependencies are inferred from the claim text.