H10P 30/222
Characterised by the angle between the ion beam and the crystal planes
Official title: {characterised by the angle between the ion beam and the crystal planes or the main crystal surface (characterised by the angle between the ion beam and the mask H10P30/221)}
H10P30/222 (Characterised by the angle between the ion beam and the crystal planes) appears on 3,043 US grants and 3,126 published applications in this corpus.
Search patents in H10P- Granted patents
- 3,043
- Published applications
- 3,126
- Assignees
- 502
- Inventors
- 4,186
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 2 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 2 | 0 |
| 1984 | 2 | 0 |
| 1985 | 3 | 0 |
| 1986 | 0 | 0 |
| 1987 | 2 | 0 |
| 1988 | 2 | 0 |
| 1989 | 3 | 0 |
| 1990 | 2 | 0 |
| 1991 | 9 | 0 |
| 1992 | 8 | 0 |
| 1993 | 15 | 0 |
| 1994 | 18 | 0 |
| 1995 | 15 | 0 |
| 1996 | 20 | 0 |
| 1997 | 14 | 0 |
| 1998 | 35 | 0 |
| 1999 | 57 | 0 |
| 2000 | 60 | 0 |
| 2001 | 80 | 28 |
| 2002 | 74 | 69 |
| 2003 | 92 | 77 |
| 2004 | 90 | 110 |
| 2005 | 71 | 140 |
| 2006 | 97 | 122 |
| 2007 | 92 | 130 |
| 2008 | 72 | 142 |
| 2009 | 88 | 149 |
| 2010 | 122 | 141 |
| 2011 | 132 | 202 |
| 2012 | 140 | 176 |
| 2013 | 170 | 169 |
| 2014 | 192 | 147 |
| 2015 | 161 | 211 |
| 2016 | 208 | 185 |
| 2017 | 146 | 131 |
| 2018 | 122 | 111 |
| 2019 | 123 | 116 |
| 2020 | 104 | 95 |
| 2021 | 79 | 88 |
| 2022 | 75 | 118 |
| 2023 | 69 | 84 |
| 2024 | 84 | 78 |
| 2025 | 59 | 68 |
| 2026 | 29 | 39 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Doped well for semiconductor devices29 Sep 2026US 12,751,078 B2Taiwan Semiconductor Manufacturing Company.Ltd
- SiC VJFET with edge termination for dual tilted gate implants15 Sep 2026US 12,740,107 B2Wolfspeed, Inc.
- Transistor device and manufacturing method thereof8 Sep 2026US 12,733,226 B2Suzhou Loongspeed Semiconductor Technology Co., Ltd.
- Process for manufacturing localized ion implants in silicon-carbide power electronic devices25 Aug 2026US 12,721,069 B2STMicroelectronics International N. V.
- Ion beam implantation method and semiconductor device25 Aug 2026US 12,721,070 B2Infineon Technologies AG
- Breakdown voltage improvement in vertical trench-gate devices1 Oct 2026US 2026/0304833 A1Semiconductor Components Industries, LLC
- Trench mosfet structure and manufacturing method thereof24 Sep 2026US 2026/0293198 A1Chongqing Alpha and Omega Semiconductor Limited
- Semiconductor device and method for manufacturing the semiconductor device17 Sep 2026US 2026/0282442 A1Semiconductor Energy Laboratory Co.Ltd.
- Gate trench power semiconductor devices having trench shielding patterns formed during the well implant and related methods17 Sep 2026US 2026/0282464 A1Wolfspeed, Inc.
- Power electronic device with current spreading regions and corresponding manufacturing process20 Aug 2026US 2026/0247667 A1STMicroelectronics International N. V.
Most cited
By later US patents
- Fin field-effect transistors568US 7,667,271 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2010
- Power semiconductor devices and methods of manufacture273US 7,345,342 B2Fairchild Semiconductor Corporation · 2008
- Low-K gate spacers by fluorine implantation252US 6,720,213 B1International Business Machines Corporation · 2004
- Gate stack for high performance sub-micron CMOS devices236US 6,596,599 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2003
- Semiconductor device having metal silicide film220US 5,659,194 AMitsubishi Denki Kabushiki Kaisha · 1997