Power electronic device with current spreading regions and corresponding manufacturing process

A power electronic device, having a plurality of elementary cells and comprising:

• a substrate, having a first electrical conductivity and a first doping value and defining a front surface;
• first Current Spreading Layer (CSL) regions arranged in a deep position of said substrate at a distance from the front surface, having the first electrical conductivity and a second doping value, greater than the first doping value;
• first doped regions of the elementary cells of said power electronic device arranged above said first current spreading regions, having a second conductivity type, said first doped regions being separated from each other in a direction parallel to said front surface by intercell regions of said power electronic device;
• and
• second CSL regions arranged at said intercell regions, having the first electrical conductivity and distinct and independent characteristics with respect to said first current spreading regions.

A device, comprising:

• a substrate;
• a first current spreading region on the substrate, and a second current spreading region on the substate spaced apart from the first current spreading substrate;
• a first deep body region on the first current spreading region, and a second deep body region on the second current spreading region;
• a first body region on the first deep body region, and a second body region on the second deep body region;
• a first body contact region on the first body region, and a second body contact region on the second body region;
• a first source region on the first body contact region, and a second source region on the second body contact region;
• a first silicide region on the first source region, and a second silicide region on the second body contact region;
• a third current spreading region that extends between the first current spreading layer and the second current spreading layer, the first deep body region and the second deep body region, and the first body region and the second body region;
• a gate oxide layer on the third current spreading region, on the first source region, on the second source region, on the first body region, and on the second body region;
• a first contact structure coupled to the first silicide region, the first contact structure extends through the gate oxide layer to the first silicide region;
• and
• a second contact structure coupled to the second silicide region, the second contact structure extends through the first gate oxide layer and the second source region to the second silicide region.