Gate trench power semiconductor devices having trench shielding patterns formed during the well implant and related methods

A semiconductor device comprising a wide band-gap semiconductor layer structure, the wide band-gap semiconductor layer structure comprising:

• a drift region that has a first conductivity type;
• a well region having a second conductivity on the drift region;
• a source region having the first conductivity type on the well region;
• a gate electrode within a trench;
• and
• a shielding region having the second conductivity type underneath the trench,
• wherein the shielding region extends a first distance from a bottom of the trench downwardly into the semiconductor layer structure and the well region extends a second distance from a top surface of the semiconductor layer structure downwardly into the semiconductor layer structure, where the first distance is within +/-10% of the second distance.