H10P 30/225
Of a molecular ion
Official title: {of a molecular ion, e.g. decaborane}
H10P30/225 (Of a molecular ion) appears on 945 US grants and 794 published applications in this corpus.
Search patents in H10P- Granted patents
- 945
- Published applications
- 794
- Assignees
- 236
- Inventors
- 1,437
- Latest grant
- 2 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 2 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 4 | 0 |
| 1990 | 0 | 0 |
| 1991 | 3 | 0 |
| 1992 | 4 | 0 |
| 1993 | 7 | 0 |
| 1994 | 7 | 0 |
| 1995 | 13 | 0 |
| 1996 | 7 | 0 |
| 1997 | 14 | 0 |
| 1998 | 12 | 0 |
| 1999 | 43 | 0 |
| 2000 | 56 | 0 |
| 2001 | 57 | 16 |
| 2002 | 62 | 39 |
| 2003 | 41 | 33 |
| 2004 | 42 | 58 |
| 2005 | 26 | 55 |
| 2006 | 42 | 48 |
| 2007 | 35 | 57 |
| 2008 | 30 | 93 |
| 2009 | 43 | 45 |
| 2010 | 51 | 54 |
| 2011 | 55 | 52 |
| 2012 | 41 | 49 |
| 2013 | 52 | 47 |
| 2014 | 50 | 42 |
| 2015 | 36 | 27 |
| 2016 | 27 | 24 |
| 2017 | 21 | 8 |
| 2018 | 17 | 9 |
| 2019 | 5 | 8 |
| 2020 | 11 | 8 |
| 2021 | 6 | 7 |
| 2022 | 2 | 2 |
| 2023 | 4 | 6 |
| 2024 | 6 | 5 |
| 2025 | 3 | 2 |
| 2026 | 2 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Method for fabricating a semiconductor device10 Mar 2026US 12,575,387 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method for semiconductor device22 Jul 2025US 12,369,370 B2Fuji Electric Co., Ltd.
- Multi-fin FINFET device including epitaxial growth barrier on outside surfaces of outermost fins and related methods15 Apr 2025US 12,278,234 B2Bell Semiconductor, LLC
- Power diode and method of manufacturing a power diode28 Jan 2025US 12,211,945 B2Infineon Technologies Austria AG
- Dual Dopant Source/Drain Regions and Methods of Forming Same6 Nov 2025US 2025/0344489 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for fabricating semiconductor device10 Apr 2025US 2025/0118560 A1United Semiconductor (Xiamen) Co., Ltd.
- Dual Dopant Source/Drain Regions and Methods of Forming Same14 Nov 2024US 2024/0379446 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device having dopant deactivation underneath gate7 Nov 2024US 2024/0371940 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method of producing semiconductor epitaxial wafer, semiconductor epitaxial wafer, and method of producing solid-state image sensing device22 Aug 2024US 2024/0282801 A1Sumco Corporation
Most cited
By later US patents
- Low temperature CVD process with selected stress of the CVD layer on CMOS devices559US 7,393,765 B2APPLIED Materials.Inc. · 2008
- Controlled cleavage process and device for patterned films426US 5,985,742 ASilicon Genesis Corporation · 1999
- Controlled cleavage process and device for patterned films344US 6,528,391 B1Silicon Genesis Corporation · 2003
- Single-crystal silicon substrate, SOI substrate, semiconductor device, display device, and manufacturing method of semiconductor device315US 7,508,034 B2Sharp Kabushiki Kaisha · 2009
- Method and structure for fabricating multiple tiled regions onto a plate using a controlled cleaving process286US 7,674,687 B2Silicon Genesis Corporation · 2010