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US 12,648,378 B2Granted
Method for fabricating semiconductor device
AssigneeUnited Semiconductor (Xiamen) Co., Ltd.
InventorsLinshan Yuan, Guang Yang, Liangfeng Zhang, Jinjian Ouyang, Chin-Chun Huang, Wen Yi Tan
Life of this patent
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Abstract
A method for fabricating a semiconductor device includes steps as follows. A gate structure is formed on a substrate. A fluorine-containing dopant is implanted into the substrate to form two lightly doped drain regions at two sides of the gate structure. A thermal treatment process is performed, in which a part of fluorine atoms of the fluorine-containing dopant diffuse onto a surface of the substrate. The part of fluorine atoms are removed.
Claims9
A method for fabricating a semiconductor device, comprising:
- forming a gate structure on a substrate;
- implanting a fluorine-containing dopant into the substrate to form two lightly doped drain regions at two sides of the gate structure;
- performing a thermal treatment process, wherein a part of fluorine atoms of the fluorine-containing dopant diffuse onto a surface of the substrate;
- and
- removing the part of the fluorine atoms, wherein removing the part of the fluorine atoms is introducing a gas to clear the part of the fluorine atoms.
2 more elements
Dependencies are inferred from the claim text.