Single-crystal silicon substrate, SOI substrate, semiconductor device, display device, and manufacturing method of semiconductor device

A semiconductor device, comprising;

• a non-single-crystal silicon thin-film device manufactured from a non-single-crystal silicon thin film and a single-crystal silicon thin-film device manufactured from a single-crystal silicon thin film,
• wherein the non-single-crystal silicon thin-film device and the single-crystal silicon thin-film device are provided in different areas of an insulating substrate,
• wherein the single-crystal silicon thin-film device is bonded with the insulating substrate via an intervening inorganic insulating film,
• wherein, the non-single-crystal silicon thin-film device is either a MOS non-single-crystal silicon thin-film transistor or a MIS non-single-crystal silicon thin-film transistor, and the single-crystal silicon thin-film device is a bipolar single-crystal silicon thin-film transistor, and
• wherein, a metal wiring and a contact pattern of the bipolar single-crystal silicon thin-film transistor include respective parts each being formed in accordance with a wiring rule which is more relaxed than a wiring rule of a base pattern of the bipolar single-crystal silicon thin-film transistor.