Power diode and method of manufacturing a power diode
AssigneeInfineon Technologies Austria AG
InventorsAnton Mauder, Mario Barusic, Markus Beninger-Bina, Matteo Dainese
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Abstract
A power diode includes a semiconductor body having an anode region and a drift region, the semiconductor body being coupled to an anode metallization of the power diode and to a cathode metallization of the power diode, and an anode contact zone and an anode damage zone, both implemented in the anode region, the anode contact zone being arranged in contact with the anode metallization, and the anode damage zone being arranged in contact with and below the anode contact zone, wherein fluorine is included within each of the anode contact zone and the anode damage zone at a fluorine concentration of at least 1016 atoms*cm-3.
Claims13
A power diode, comprising:
- a semiconductor body having an anode region and a drift region, the semiconductor body being coupled to an anode metallization of the power diode and to a cathode metallization of the power diode;
- and
- an anode contact zone and an anode damage zone, both implemented in the anode region, the anode contact zone being arranged in contact with the anode metallization, and the anode damage zone being arranged in contact with and below the anode contact zone,
- wherein fluorine is included within each of the anode contact zone and the anode damage zone at a fluorine concentration of at least 1016 atoms*cm-3.
Dependencies are inferred from the claim text.