Controlled cleavage process and device for patterned films
AssigneeSilicon Genesis Corporation
InventorsFrancois J. Henley, Nathan Cheung
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Abstract
A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth and the particles for a pattern at the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
Claims22
A process for forming a film of material comprising devices, said process comprising steps of:
- introducing particles in a selected manner through a surface of a substrate to a selected depth underneath said surface, said particles being at a concentration at said selected depth to define a substrate material to be removed above said selected depth;
- and
- providing energy to a selected region of said substrate to initiate a controlled cleaving action at said selected depth in said substrate, whereupon said cleaving action is made using a propagating cleave front to free a portion of said material to be removed from said substrate;
- wherein said substrate material to be removed comprise a plurality of devices therein.
A process for forming a memory integrated circuit, said process comprising steps of:
- providing a substrate, said substrate comprising a plurality of capacitors defined thereon, said substrate also comprising a dielectric layer formed overlying said capacitors and a surface that is substantially planar overlying said dielectric layer;
- introducing particles in a selected manner through said surface of said substrate to a selected depth underneath said surface and said capacitors, said particles being at a concentration at said selected depth to define a substrate material to be removed above said selected depth;
- joining said surface of said substrate to a face of a target substrate;
- and
- providing energy to a selected region of said substrate to initiate a controlled cleaving action at said selected depth in said substrate, whereupon said cleaving action is made using a propagating cleave front to free a portion of said material to be removed from said substrate.
Dependencies are inferred from the claim text.