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US 2025/0118560 A1Published application
Method for fabricating semiconductor device
AssigneeUnited Semiconductor (Xiamen) Co., Ltd.
InventorsLINSHAN YUAN, Guang Yang, Liangfeng Zhang, Jinjian OUYANG, Chin-Chun Huang, WEN YI TAN
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Abstract
A method for fabricating a semiconductor device includes steps as follows. A gate structure is formed on a substrate. A fluorine-containing dopant is implanted into the substrate to form two lightly doped drain regions at two sides of the gate structure. A thermal treatment process is performed, in which a part of fluorine atoms of the fluorine-containing dopant diffuse onto a surface of the substrate. The part of fluorine atoms are removed.
Claims10
A method for fabricating a semiconductor device, comprising:
- forming a gate structure on a substrate;
- implanting a fluorine-containing dopant into the substrate to form two lightly doped drain regions at two sides of the gate structure;
- performing a thermal treatment process, wherein a part of fluorine atoms of the fluorine-containing dopant diffuse onto a surface of the substrate;
- and
- removing the part of the fluorine atoms.
2 more elements
Dependencies are inferred from the claim text.