Method of producing semiconductor epitaxial wafer, semiconductor epitaxial wafer, and method of producing solid-state image sensing device

A method of making an epitaxial wafer having a substrate which has a top surface, the method comprising:

• adding a carbon concentration in a localized region in the substrate to achieve a peak carbon concentration in a range of 1×1017 atoms/cm3 to 1×1022 atoms/cm3 in the substrate;
• adding a boron concentration in the localized region in the substrate to achieve a peak boron concentration in a range of 1×1017 atoms/cm3 to 1×1022 atoms/cm3 in the substrate, such carbon concentration and boron concentration forming a modifying layer which provides a gettering function;
• forming an epitaxial layer on the top surface of the substrate;
• and
• applying a nickel contaminating agent of 1.0×1014 atoms/cm2 to the epitaxial wafer and heating the epitaxial wafer at about 1000° C. for an hour, wherein the modifying layer getters nickel of 7.5×1013 atoms/cm2 or more as measured by Secondary Ion Mass Spectrometry (SIMS).

A method of making an epitaxial wafer having a substrate which has a top surface, the method comprising:

• adding a carbon concentration in a localized region in the substrate to achieve a peak carbon concentration in a range of 1×1017 atoms/cm3 to 1×1022 atoms/cm3 in the substrate;
• adding a phosphorus concentration in the localized region in the substrate to achieve a peak phosphorous concentration in a range of 1×1017 atoms/cm3 to 1×1022 atoms/cm3 in the substrate;
• and
• forming an epitaxial layer on the top surface of the substrate;
• wherein the carbon concentration and the phosphorus concentration in the localized region of the substrate form a modifying layer which provides a gettering function such that, when the epitaxial wafer is subjected to a nickel contaminating agent of 1.0×1014 atoms/cm2 and is heated at about 1000° C. for an hour, the modifying layer getters nickel of 7.5×1013 atoms/cm2 or more as measured by Secondary Ion Mass Spectrometry (SIMS).

A method of making an epitaxial wafer having a substrate which has a top surface, the method comprising:

• adding a carbon concentration in a localized region in the substrate to achieve a peak carbon concentration in a range of 1×1017 atoms/cm3 to 1×1022 atoms/cm3 in the substrate;
• adding a phosphorus concentration in the localized region in the substrate to achieve a peak phosphorous concentration in a range of 1×1017 atoms/cm3 to 1×1022 atoms/cm3 in the substrate, such carbon concentration and phosphorus concentration form a modifying layer which provides a gettering function;
• forming an epitaxial layer on the top surface of the substrate;
• and
• applying a nickel contaminating agent of 1.0×1014 atoms/cm2 to the epitaxial wafer and heating the epitaxial wafer at about 1000° C. for an hour, wherein the modifying layer getters nickel of 7.5×1013 atoms/cm2 or more as measured by Secondary Ion Mass Spectrometry (SIMS).

An epitaxial wafer having a substrate, which has a top surface, and an epitaxial layer on the top surface of the substrate, the epitaxial wafer further comprising:

• a carbon concentration in a localized region in the substrate having a peak carbon concentration in a range of 1×1017 atoms/cm3 to 1×1022 atoms/cm3 in the substrate;
• and
• a boron concentration in the localized region in the substrate having a peak boron concentration in a range of 1×1017 atoms/cm3 to 1×1022 atoms/cm3 in the substrate;
• wherein the carbon concentration and the boron concentration in the localized region of the substrate form a modifying layer which provides a gettering function such that, when the epitaxial wafer is subjected to a nickel contaminating agent of 1.0×1014 atoms/cm2 and is heated at about 1000° C. for an hour, the modifying layer getters nickel of 7.5×1013 atoms/cm2 or more as measured by Secondary Ion Mass Spectrometry (SIMS).

A semiconductor wafer comprising:

• a substrate having a top surface;
• a carbon concentration having a first peak concentration in the range of 1×1017 atoms/cm3 to 1×1022 atoms/cm3,
• a boron concentration having a second peak concentration in the range of 1×1017 atoms/cm3 to 1×1022 atoms/cm3,
• wherein the carbon concentration and the boron concentration in a localized region forming a modifying layer that provides a gettering function;
• and
• a nickel concentration in the modifying layer of 7.5×1013 atoms/cm2 or more and a copper concentration in the modifying layer of 7.5×1013 atoms/cm2 or more, both the nickel concentration and the copper concentration obtained from a gettering capability evaluation that includes applying a spin coat contamination process on the semiconductor wafer using a nickel contaminating agent of 1.0×1014 atoms/cm2 and a copper contaminating agent of 1.0×1014 atoms/cm2, and then heating the semiconductor wafer at about 1000° C. for 1 hour, and then measuring the nickel concentration and the copper concentration using Secondary Ion Mass Spectrometry (SIMS).

An epitaxial wafer having a substrate, which has a top surface, and an epitaxial layer on the top surface of the substrate, the epitaxial wafer further comprising:

• a carbon concentration in a localized region in the substrate having a peak carbon concentration in a range of 1×1017 atoms/cm3 to 1×1022 atoms/cm3 in the substrate;
• and
• a phosphorus concentration in the localized region in the substrate having a peak phosphorous concentration in a range of 1×1017 atoms/cm3 to 1×1022 atoms/cm3 in the substrate;
• wherein the carbon concentration and the phosphorus concentration in the localized region of the substrate form a modifying layer which provides a gettering function such that, when the epitaxial wafer is subjected to a nickel contaminating agent of 1.0×1014 atoms/cm2 and is heated at about 1000° C. for an hour, the modifying layer getters nickel of 7.5×1013 atoms/cm2 or more as measured by Secondary Ion Mass Spectrometry (SIMS).

A semiconductor wafer comprising:

• a substrate having a top surface;
• a carbon concentration having a first peak concentration in the range of 1×1017 atoms/cm3 to 1×1022 atoms/cm3,
• a phosphorus concentration having a second peak concentration in the range of 1×1017 atoms/cm3 to 1×1022 atoms/cm3,
• wherein the carbon concentration and the phosphorus concentration in a localized region forming a modifying layer that provides a gettering function;
• and
• a nickel concentration in the modifying layer of 7.5×1013 atoms/cm2 or more and a copper concentration in the modifying layer of 7.5×1013 atoms/cm2 or more, both the nickel concentration and the copper concentration obtained from a gettering capability evaluation that includes applying a spin coat contamination process on the semiconductor wafer using a nickel contaminating agent of 1.0×1014 atoms/cm2 and a copper contaminating agent of 1.0×1014 atoms/cm2, and then heating the semiconductor wafer at about 1000° C. for 1 hour, and then measuring the nickel concentration and the copper concentration using Secondary Ion Mass Spectrometry (SIMS).