Multi-fin FINFET device including epitaxial growth barrier on outside surfaces of outermost fins and related methods

A method of making a multi-fin FINFET device comprising:

• forming a plurality of semiconductor fins extending upwardly from a substrate and being spaced apart along the substrate, each semiconductor fin having opposing first and second ends and a medial portion therebetween,
• forming at least one gate overlying the medial portions of the semiconductor fins;
• forming an epitaxial growth barrier on top surfaces of the plurality of semiconductor fins, on outside surfaces of outermost fins of the plurality of semiconductor fins, and on portions of inner surfaces thereof adjacent the top surfaces, wherein the epitaxial growth barrier is not provided on an end surface of each end of each fin;
• forming a plurality of raised epitaxial semiconductor source regions between the semiconductor fins adjacent the first ends thereof;
• and
• forming a plurality of raised epitaxial semiconductor drain regions between the semiconductor fins adjacent the second ends thereof.