H10P 30/214
Recoil-implantation
Official title: {Recoil-implantation}
H10P30/214 (Recoil-implantation) appears on 93 US grants and 88 published applications in this corpus.
Search patents in H10P- Granted patents
- 93
- Published applications
- 88
- Assignees
- 45
- Inventors
- 212
- Latest grant
- 14 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 2 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 2 | 0 |
| 1998 | 1 | 0 |
| 1999 | 2 | 0 |
| 2000 | 3 | 0 |
| 2001 | 1 | 0 |
| 2002 | 2 | 1 |
| 2003 | 0 | 0 |
| 2004 | 2 | 2 |
| 2005 | 2 | 4 |
| 2006 | 4 | 0 |
| 2007 | 0 | 2 |
| 2008 | 0 | 2 |
| 2009 | 2 | 0 |
| 2010 | 1 | 1 |
| 2011 | 0 | 2 |
| 2012 | 2 | 5 |
| 2013 | 4 | 7 |
| 2014 | 4 | 3 |
| 2015 | 3 | 2 |
| 2016 | 2 | 3 |
| 2017 | 2 | 6 |
| 2018 | 5 | 8 |
| 2019 | 6 | 5 |
| 2020 | 9 | 3 |
| 2021 | 1 | 4 |
| 2022 | 8 | 11 |
| 2023 | 4 | 5 |
| 2024 | 2 | 5 |
| 2025 | 7 | 5 |
| 2026 | 4 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device and manufacturing method of semiconductor device14 Jul 2026US 12,685,049 B2Fuji Electric Co., Ltd.
- Semiconductor device and manufacturing method of semiconductor device12 May 2026US 12,628,584 B2Fuji Electric Co., Ltd.
- Semiconductor device provided with at least IGBT17 Feb 2026US 12,557,573 B2Fuji Electric Co., Ltd.
- Semiconductor devices with enhanced carrier mobility13 Jan 2026US 12,527,039 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device including a field stop region7 Oct 2025US 12,438,002 B2Infineon Technologies AG
- Semiconductor device and manufacturing method25 Jun 2026US 2026/0182274 A1Fuji Electric Co., Ltd.
- Semiconductor device including a field stop region with hydrogen related donors in first and second sub-regions15 Jan 2026US 2026/0018416 A1Infineon Technologies AG
- Field effect transistor with recrystallized source/drains and method20 Nov 2025US 2025/0359191 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Source/drain features with improved strain properties28 Aug 2025US 2025/0275191 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method thereof24 Apr 2025US 2025/0132160 A1Fuji Electric Co., Ltd.
Most cited
By later US patents
- Process for doping semiconductors75US 4,452,644 ACommissariat A L' Energie Atomique · 1984
- Process for doping semiconductors73US 4,368,083 ACommissariat A L' Energie Atomique · 1983
- Ultra-shallow junction semiconductor device fabrication55US 5,672,541 AWisconsin Alumni Research Foundation · 1997
- Fabrication method for a semiconductor device52US 5,960,319 ASharp Kabushiki Kaisha · 1999
- Method for forming a silicide using ion beam mixing47US 5,470,794 AAdvanced Micro Devices, Inc. · 1995