Semiconductor device provided with at least IGBT

A semiconductor device provided with an IGBT, comprising:

• a semiconductor substrate having an upper surface and a lower surface, wherein bulk donors are distributed throughout the semiconductor substrate having a drift region in which a doping concentration is a donor concentration of the bulk donors;
• a hydrogen peak including:
• a local maximum arranged 25 μm or more away from the lower surface of the semiconductor substrate in a depth direction, wherein a hydrogen chemical concentration shows a local maximum value at the local maximum;
• an upper tail in which the hydrogen chemical concentration decreases in a direction from the local maximum toward the upper surface;
• and a lower tail in which the hydrogen chemical concentration decreases in a direction from the local maximum toward the lower surface more gradually than the upper tail;
• a first high concentration region having a donor concentration higher than a bulk donor concentration and including a region extending for 4 μm or more from the local maximum of the hydrogen peak toward the upper surface;
• a donor concentration peak provided at a depth position identical to the hydrogen peak, wherein a donor concentration distribution in the depth direction shows a peak at the donor concentration peak;
• an upper side flat portion arranged on an upper surface side of the semiconductor substrate relative to the donor concentration peak, wherein a donor concentration distribution in the depth direction is flat and substantially constant in the upper side flat portion;
• and
• a lower side flat portion arranged on a lower surface side of the semiconductor substrate relative to the donor concentration peak, wherein a donor concentration distribution in the depth direction is flat and substantially constant in the lower side flat portion, wherein
• a donor concentration of the upper side flat portion is 0.5 times or more and twice or less a donor concentration of the lower side flat portion, and
• a trench portion provided on the upper surface of the semiconductor substrate,
• a carrier lifetime distribution from a lower surface side of the upper side flat portion to a bottom depth of the trench portion is substantially constant.

A semiconductor device provided with an IGBT, comprising:

• a semiconductor substrate having an upper surface and a lower surface, wherein bulk donors are distributed throughout the semiconductor substrate having a drift region in which a doping concentration is a donor concentration of the bulk donors;
• a hydrogen peak including:
• a local maximum arranged 25 μm or more away from the lower surface of the semiconductor substrate in a depth direction, wherein a hydrogen chemical concentration shows a local maximum value at the local maximum;
• an upper tail in which the hydrogen chemical concentration decreases in a direction from the local maximum toward the upper surface;
• and a lower tail in which the hydrogen chemical concentration decreases in a direction from the local maximum toward the lower surface more gradually than the upper tail;
• a first high concentration region having a donor concentration higher than a bulk donor concentration and including a region extending for 4 μm or more from the local maximum of the hydrogen peak toward the upper surface;
• a donor concentration peak provided at a depth position identical to the hydrogen peak, wherein a donor concentration distribution in the depth direction shows a peak at the donor concentration peak;
• an upper side flat portion arranged on an upper surface side of the semiconductor substrate relative to the donor concentration peak, wherein a donor concentration distribution in the depth direction is flat and substantially constant in the upper side flat portion;
• and
• a lower side flat portion arranged on a lower surface side of the semiconductor substrate relative to the donor concentration peak, wherein a donor concentration distribution in the depth direction is flat and substantially constant in the lower side flat portion, wherein
• a donor concentration of the upper side flat portion is 0.5 times or more and twice or less a donor concentration of the lower side flat portion, and
• a depth of the donor concentration peak from the lower surface length is more than 30 μm.

A semiconductor device provided with an IGBT, comprising:

• a semiconductor substrate having an upper surface and a lower surface, wherein bulk donors are distributed throughout the semiconductor substrate having a drift region in which a doping concentration is a donor concentration of only the bulk donors;
• a hydrogen peak including:
• a local maximum arranged 25 μm or more away from the lower surface of the semiconductor substrate in a depth direction, wherein a hydrogen chemical concentration shows a local maximum value at the local maximum;
• an upper tail in which the hydrogen chemical concentration decreases in a direction from the local maximum toward the upper surface;
• and a lower tail in which the hydrogen chemical concentration decreases in a direction from the local maximum toward the lower surface more gradually than the upper tail;
• a first high concentration region having a donor concentration higher than the donor concentration of only the bulk donors and including a region extending for 4 μm or more from the local maximum of the hydrogen peak toward the upper surface;
• a donor concentration peak provided at a depth position identical to the hydrogen peak, wherein a distribution of the donor concentration in the depth direction shows a peak at the donor concentration peak;
• an upper side flat portion arranged on an upper surface side of the semiconductor substrate relative to the donor concentration peak, wherein the distribution of the donor concentration in the depth direction is flat and substantially constant in the upper side flat portion;
• and
• a lower side flat portion arranged on a lower surface side of the semiconductor substrate relative to the donor concentration peak, wherein the distribution of the donor concentration in the depth direction is flat and substantially constant in the lower side flat portion, wherein
• a donor concentration of the upper side flat portion is 0.5 times or more and twice or less a donor concentration of the lower side flat portion, and
• a vacancy density at a depth of a central point of the upper side flat portion of the donor concentration is substantially the same as a vacancy density at a central point of the lower side flat portion.

A semiconductor device provided with an IGBT, comprising:

• a semiconductor substrate having an upper surface and a lower surface, wherein bulk donors are distributed throughout the semiconductor substrate having a drift region in which a doping concentration is a donor concentration of only the bulk donors;
• a hydrogen peak including:
• a local maximum arranged 25 μm or more away from the lower surface of the semiconductor substrate in a depth direction, wherein a hydrogen chemical concentration shows a local maximum value at the local maximum;
• an upper tail in which the hydrogen chemical concentration decreases in a direction from the local maximum toward the upper surface;
• and a lower tail in which the hydrogen chemical concentration decreases in a direction from the local maximum toward the lower surface more gradually than the upper tail;
• a first high concentration region having a donor concentration higher than the donor concentration of only the bulk donors and including a region extending for 4 μm or more from the local maximum of the hydrogen peak toward the upper surface;
• a donor concentration peak provided at a depth position identical to the hydrogen peak, wherein a distribution of the donor concentration in the depth direction shows a peak at the donor concentration peak;
• an upper side flat portion arranged on an upper surface side of the semiconductor substrate relative to the donor concentration peak, wherein the distribution of the donor concentration in the depth direction is flat and substantially constant in the upper side flat portion;
• and
• a lower side flat portion arranged on a lower surface side of the semiconductor substrate relative to the donor concentration peak, wherein the distribution of the donor concentration in the depth direction is flat and substantially constant in the lower side flat portion, wherein
• a donor concentration of the upper side flat portion is 0.5 times or more and twice or less a donor concentration of the lower side flat portion, and
• a carrier lifetime at a depth of a central point of the upper side flat portion of the donor concentration is substantially the same as the carrier lifetime at a central point of the lower side flat portion.