Back to results
US 2025/0359191 A1Published application
Field effect transistor with recrystallized source/drains and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Cheng CHEN, Sih-Jie LIU, Liang-Yin CHEN, Chi-On CHUI
Life of this patent
Estimating the term…
Abstract
A method includes forming a stack of nanostructures over a substrate; forming a source/drain opening adjacent the stack of nanostructures; forming a semiconductor layer in the source/drain opening; forming an amorphous semiconductor layer by performing an ion implantation on the semiconductor layer; and forming a recrystallized source/drain by annealing the amorphous semiconductor layer.
Claims20
A method, comprising:
- forming a stack of nanostructures over a substrate;
- forming a source/drain opening adjacent the stack of nanostructures;
- forming a semiconductor layer in the source/drain opening;
- forming an amorphous semiconductor layer by amorphizing the semiconductor layer;
- and
- forming a recrystallized source/drain by annealing the amorphous semiconductor layer.
3 more elements
A method, comprising:
- forming a stack of nanostructures over a substrate;
- forming a source/drain opening adjacent the stack of nanostructures;
- forming a semiconductor layer in the source/drain opening;
- forming an amorphous semiconductor layer by amorphizing the semiconductor layer, the amorphizing comprising ion implantation or introducing post source-drain epitaxy material that renders the semiconductor layer substantially amorphous;
- and
- forming a source/drain by performing solid-phase epitaxy regrowth on the amorphous semiconductor layer.
3 more elements
A device, comprising:
- a substrate;
- a first stack of semiconductor channels on the substrate;
- a second stack of semiconductor channels on the substrate;
- a first recrystallized source/drain of a first type abutting the semiconductor channels of the first stack;
- and
- a second recrystallized source/drain of a second type different than the first type abutting the semiconductor channels of the second stack, the first recrystallized source/drain having a first number of stacking faults that is different than a second number of stacking faults of the second recrystallized source/drain, wherein the first type is p-type and the second type is n-type.
3 more elements
Dependencies are inferred from the claim text.