Process for doping semiconductors

Process for doping semiconductors consisting in implanting dopant particles in a substrate and in rendering them electrically active, so as to modify the physical properties of the substrate, comprising the following successive steps of:

• effecting an implantation by recoil of the dopant particles in the substrate, which consists in depositing on the surface of the substrate a layer of material containing dopant particles, and in bombarding said layer by means of a beam of bombarding particles, so as to cause the dopant particles to penetrate in the substrate;
• eliminating the layer of material deposited on the surface of the substrate;
• effecting transitory annealing, which consists in bringing to the surface, or to the level of the first implanted layers, for a very short length of time, an energy density such that very high temperatures are reached, so as to produce a local liquefaction of the first layers of the substrate.