Method for forming a silicide using ion beam mixing

A method for enhancing the formation of a metal silicide upon a polycrystalline silicon, comprising the steps of:

• providing a polysilicon upon a substrate upper surface, wherein said polysilicon includes a polysilicon upper surface;
• implanting an impurity into said polysilicon to a first peak density at a first elevation below said polysilicon upper surface;
• depositing a metal upon said polysilicon upper surface, wherein said metal comprises a film having a metal upper surface;
• implanting germanium into said metal to a second peak density at a second elevation below said polysilicon upper surface, and above said substrate upper surface thereby allowing a plurality of atoms of said germanium to impact upon and move a plurality of atoms of said metal to a third elevation below said polysilicon upper surface, wherein said third elevation is between said first elevation and said second elevation;
• and
• annealing said substrate to react said metal layer with said silicon substrate in order to form a metal silicide.

A method for forming a conductive contact, comprising the steps of:

• providing a silicon substrate having an impurity region and polysilicon region formed thereon;
• growing an oxide upon said impurity region and said polysilicon region;
• forming within a sputter chamber a metal layer across said oxide;
• implanting germanium into said metal layer to a peak concentration density at a first elevation within said metal layer and above said oxide, and simultaneously allowing a plurality of atoms of said implanted germanium to impact upon and move a plurality of atoms of said metal to a second elevation below said metal layer;
• annealing said substrate to react said metal layer with said impurity and polysilicon regions in order to form a metal silicide;
• and
• depositing a conductor upon said metal silicide to form a conductive contact to said impurity region and said polysilicon region.