H10P 30/202
Characterised by the semiconductor materials
Official title: {characterised by the semiconductor materials}
H10P30/202 (Characterised by the semiconductor materials) appears on 7,741 US grants and 7,924 published applications in this corpus.
Search patents in H10P- Granted patents
- 7,741
- Published applications
- 7,924
- Assignees
- 1,080
- Inventors
- 10,267
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 9 | 0 |
| 1977 | 35 | 0 |
| 1978 | 34 | 0 |
| 1979 | 34 | 0 |
| 1980 | 19 | 0 |
| 1981 | 23 | 0 |
| 1982 | 16 | 0 |
| 1983 | 30 | 0 |
| 1984 | 28 | 0 |
| 1985 | 32 | 0 |
| 1986 | 23 | 0 |
| 1987 | 29 | 0 |
| 1988 | 21 | 0 |
| 1989 | 18 | 0 |
| 1990 | 12 | 0 |
| 1991 | 16 | 0 |
| 1992 | 22 | 0 |
| 1993 | 32 | 0 |
| 1994 | 32 | 0 |
| 1995 | 29 | 0 |
| 1996 | 17 | 0 |
| 1997 | 29 | 0 |
| 1998 | 46 | 0 |
| 1999 | 110 | 0 |
| 2000 | 160 | 0 |
| 2001 | 147 | 39 |
| 2002 | 166 | 118 |
| 2003 | 134 | 117 |
| 2004 | 146 | 209 |
| 2005 | 105 | 204 |
| 2006 | 158 | 238 |
| 2007 | 151 | 244 |
| 2008 | 136 | 341 |
| 2009 | 178 | 268 |
| 2010 | 258 | 252 |
| 2011 | 214 | 241 |
| 2012 | 183 | 248 |
| 2013 | 240 | 290 |
| 2014 | 286 | 337 |
| 2015 | 370 | 550 |
| 2016 | 536 | 598 |
| 2017 | 555 | 563 |
| 2018 | 487 | 481 |
| 2019 | 489 | 470 |
| 2020 | 422 | 404 |
| 2021 | 354 | 358 |
| 2022 | 280 | 363 |
| 2023 | 263 | 319 |
| 2024 | 236 | 306 |
| 2025 | 242 | 247 |
| 2026 | 149 | 119 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method of fabricating transistors with implanting dopants at first and second dosages in the collector region to form the base region6 Oct 2026US 12,757,420 B2Texas Instruments Incorporated
- Method for manufacturing semiconductor structure with source/drain structure having modified shape6 Oct 2026US 12,757,422 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device6 Oct 2026US 12,757,446 B2Idemitsu Kosan Co., Ltd.
- MOSFET and memory cell having improved drain current through back bias application6 Oct 2026US 12,757,460 B2Zeno Semiconductor, Inc.
- Semiconductor device6 Oct 2026US 12,757,479 B2Fuji Electric Co., Ltd.
- Crystalline defect reduction in doped region8 Oct 2026US 2026/0313926 A1Texas Instruments Incorporated
- Defect free low temperature junction formation for 4f2 dram8 Oct 2026US 2026/0313935 A1APPLIED Materials.Inc.
- Deep trench isolation for semiconductor devices with enhanced breakdown protection8 Oct 2026US 2026/0314421 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for fabricating power semiconductor device and power semiconductor device1 Oct 2026US 2026/0304812 A1Xiinergy Systems, Inc
- Gan trench mosfet and fabrication method1 Oct 2026US 2026/0304832 A1SixPoint Materials, Inc.
Most cited
By later US patents
- Process for the production of thin semiconductor material films1,233US 5,374,564 ACommissariat A L' Energie Atomique · 1994
- Silicon carbide semiconductor device and method for producing the same641US 7,829,416 B2Panasonic Corporation · 2010
- Low temperature CVD process with selected stress of the CVD layer on CMOS devices559US 7,393,765 B2APPLIED Materials.Inc. · 2008
- Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing543US 7,109,098 B1APPLIED Materials.Inc. · 2006
- Field plate in heterojunction bipolar transistor with improved break-down voltage512US 9,324,846 B1Globalfoundries Inc. · 2016