H10P 30/204
Into group iv semiconductors
Official title: {into Group IV semiconductors}
H10P30/204 (Into group iv semiconductors) appears on 7,149 US grants and 7,364 published applications in this corpus.
Search patents in H10P- Granted patents
- 7,149
- Published applications
- 7,364
- Assignees
- 974
- Inventors
- 9,360
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 7 | 0 |
| 1977 | 27 | 0 |
| 1978 | 31 | 0 |
| 1979 | 27 | 0 |
| 1980 | 15 | 0 |
| 1981 | 18 | 0 |
| 1982 | 12 | 0 |
| 1983 | 22 | 0 |
| 1984 | 24 | 0 |
| 1985 | 22 | 0 |
| 1986 | 16 | 0 |
| 1987 | 15 | 0 |
| 1988 | 17 | 0 |
| 1989 | 13 | 0 |
| 1990 | 9 | 0 |
| 1991 | 11 | 0 |
| 1992 | 17 | 0 |
| 1993 | 24 | 0 |
| 1994 | 26 | 0 |
| 1995 | 24 | 0 |
| 1996 | 17 | 0 |
| 1997 | 27 | 0 |
| 1998 | 44 | 0 |
| 1999 | 104 | 0 |
| 2000 | 155 | 0 |
| 2001 | 144 | 38 |
| 2002 | 162 | 117 |
| 2003 | 131 | 115 |
| 2004 | 145 | 207 |
| 2005 | 105 | 200 |
| 2006 | 157 | 234 |
| 2007 | 149 | 238 |
| 2008 | 134 | 335 |
| 2009 | 175 | 261 |
| 2010 | 254 | 246 |
| 2011 | 209 | 233 |
| 2012 | 174 | 226 |
| 2013 | 232 | 263 |
| 2014 | 255 | 309 |
| 2015 | 331 | 492 |
| 2016 | 496 | 556 |
| 2017 | 517 | 503 |
| 2018 | 439 | 450 |
| 2019 | 439 | 427 |
| 2020 | 393 | 377 |
| 2021 | 328 | 321 |
| 2022 | 254 | 321 |
| 2023 | 238 | 296 |
| 2024 | 212 | 273 |
| 2025 | 220 | 217 |
| 2026 | 132 | 109 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method of fabricating transistors with implanting dopants at first and second dosages in the collector region to form the base region6 Oct 2026US 12,757,420 B2Texas Instruments Incorporated
- Method for manufacturing semiconductor structure with source/drain structure having modified shape6 Oct 2026US 12,757,422 B2Taiwan Semiconductor Manufacturing Company.Ltd
- MOSFET and memory cell having improved drain current through back bias application6 Oct 2026US 12,757,460 B2Zeno Semiconductor, Inc.
- Semiconductor device6 Oct 2026US 12,757,479 B2Fuji Electric Co., Ltd.
- Structure with capacitor and fin transistor and fabricating method of the same6 Oct 2026US 12,757,480 B2United Microelectronics Corp.
- Crystalline defect reduction in doped region8 Oct 2026US 2026/0313926 A1Texas Instruments Incorporated
- Defect free low temperature junction formation for 4f2 dram8 Oct 2026US 2026/0313935 A1APPLIED Materials.Inc.
- Deep trench isolation for semiconductor devices with enhanced breakdown protection8 Oct 2026US 2026/0314421 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for fabricating power semiconductor device and power semiconductor device1 Oct 2026US 2026/0304812 A1Xiinergy Systems, Inc
- Semiconductor device, semiconductor device manufacturing method, inverter circuit, drive device, vehicle, and elevator1 Oct 2026US 2026/0304858 A1Kabushiki Kaisha Toshiba
Most cited
By later US patents
- Process for the production of thin semiconductor material films1,233US 5,374,564 ACommissariat A L' Energie Atomique · 1994
- Silicon carbide semiconductor device and method for producing the same641US 7,829,416 B2Panasonic Corporation · 2010
- Low temperature CVD process with selected stress of the CVD layer on CMOS devices559US 7,393,765 B2APPLIED Materials.Inc. · 2008
- Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing543US 7,109,098 B1APPLIED Materials.Inc. · 2006
- Field plate in heterojunction bipolar transistor with improved break-down voltage512US 9,324,846 B1Globalfoundries Inc. · 2016