Structure with capacitor and fin transistor and fabricating method of the same
AssigneeUnited Microelectronics Corp.
InventorChun-Hao Lin
Life of this patent
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Abstract
A structure with a capacitor and a fin transistor includes a substrate. The substrate includes a capacitor region and a fin transistor region. A mesa is disposed within the capacitor region of the substrate. The mesa protrudes from a surface of the substrate. The mesa includes a top surface and two sloping surfaces. Each of the sloping surfaces connects to the top surface of the mesa and the surface of the substrate. A doping region is disposed within the mesa. A capacitor electrode is only disposed on the top surface. A capacitor dielectric layer is disposed between the capacitor electrode and the doping region.
Claims5
A structure with a capacitor and a fin transistor, comprising:
- a substrate comprising a capacitor region and a fin transistor region;
- a mesa disposed within the capacitor region of the substrate, wherein the mesa protrudes from a surface of the substrate, the mesa comprises a top surface and two sloping surfaces, and each of the sloping surfaces connects to the top surface of the mesa and the surface of the substrate;
- a doping region disposed within the mesa;
- a capacitor electrode only disposed on the top surface of the mesa;
- a spacer disposed on one side of the capacitor electrode, wherein the spacer covers the top surface of the mesa and one of the two sloping surfaces of the mesa;
- and
- a capacitor dielectric layer disposed between the capacitor electrode and the doping region.
Dependencies are inferred from the claim text.