Semiconductor device, semiconductor device manufacturing method, inverter circuit, drive device, vehicle, and elevator

A semiconductor device, comprising:

• a silicon carbide layer having a first face parallel to a first direction and a second direction perpendicular to the first direction and a second face parallel to the first face;
• a first trench provided in the silicon carbide layer, provided on a side of the first face of the silicon carbide layer, and extending in the first direction;
• a first gate electrode provided in the first trench;
• a first gate insulating layer provided between the first gate electrode and the silicon carbide layer;
• a second trench provided in the silicon carbide layer, provided on the side of the first face of the silicon carbide layer, and extending in the first direction;
• a second gate electrode provided in the second trench;
• a second gate insulating layer provided between the second gate electrode and the silicon carbide layer;
• a first silicon carbide region of n-type provided in the silicon carbide layer, at least a part of the first silicon carbide region of n-type being provided between the first trench and the second trench;
• a second silicon carbide region of p-type provided in the silicon carbide layer, provided between the first trench and the second trench, and provided between the first silicon carbide region and the first face;
• a plurality of third silicon carbide regions of n-type and a plurality of fourth silicon carbide regions of p-type provided in the silicon carbide layer, provided between the first trench and the second trench, provided between the second silicon carbide region and the first face, and arranged alternately in the first direction;
• a fifth silicon carbide region of n-type provided in the silicon carbide layer, provided between the first trench and the second trench, in contact with the first trench, provided between the second silicon carbide region and the third silicon carbide region and between the second silicon carbide region and the fourth silicon carbide region, and extending in the first direction;
• a sixth silicon carbide region of n-type provided in the silicon carbide layer, provided between the first trench and the second trench, in contact with the second trench, spaced apart from the fifth silicon carbide region, provided between the second silicon carbide region and the third silicon carbide region and between the second silicon carbide region and the fourth silicon carbide region, and extending in the first direction;
• a first electrode provided on a side of the first face with respect to the silicon carbide layer and in contact with the third silicon carbide region and the fourth silicon carbide region;
• a second electrode provided on a side of the second face with respect to the silicon carbide layer;
• and
• an interlayer insulating layer provided between the first gate electrode and the first electrode and between the second gate electrode and the first electrode.