H10P 30/2042
Into crystalline silicon carbide
Official title: {into crystalline silicon carbide}
H10P30/2042 (Into crystalline silicon carbide) appears on 764 US grants and 943 published applications in this corpus.
Search patents in H10P- Granted patents
- 764
- Published applications
- 943
- Assignees
- 186
- Inventors
- 1,044
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 3 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 5 | 0 |
| 1999 | 3 | 0 |
| 2000 | 5 | 0 |
| 2001 | 5 | 2 |
| 2002 | 4 | 2 |
| 2003 | 2 | 0 |
| 2004 | 2 | 4 |
| 2005 | 1 | 7 |
| 2006 | 5 | 7 |
| 2007 | 3 | 8 |
| 2008 | 6 | 13 |
| 2009 | 5 | 19 |
| 2010 | 21 | 12 |
| 2011 | 11 | 25 |
| 2012 | 11 | 27 |
| 2013 | 23 | 37 |
| 2014 | 31 | 43 |
| 2015 | 41 | 51 |
| 2016 | 46 | 57 |
| 2017 | 63 | 79 |
| 2018 | 61 | 77 |
| 2019 | 69 | 78 |
| 2020 | 70 | 52 |
| 2021 | 50 | 61 |
| 2022 | 49 | 68 |
| 2023 | 48 | 63 |
| 2024 | 38 | 66 |
| 2025 | 44 | 49 |
| 2026 | 36 | 36 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- SiC VJFET with edge termination for dual tilted gate implants15 Sep 2026US 12,740,107 B2Wolfspeed, Inc.
- Transistor device and manufacturing method thereof8 Sep 2026US 12,733,226 B2Suzhou Loongspeed Semiconductor Technology Co., Ltd.
- Semiconductor device and method for manufacturing the same25 Aug 2026US 12,720,826 B2Kabushiki Kaisha Toshiba
- Process for manufacturing localized ion implants in silicon-carbide power electronic devices25 Aug 2026US 12,721,069 B2STMicroelectronics International N. V.
- Ion beam implantation method and semiconductor device25 Aug 2026US 12,721,070 B2Infineon Technologies AG
- Semiconductor device, semiconductor device manufacturing method, inverter circuit, drive device, vehicle, and elevator1 Oct 2026US 2026/0304858 A1Kabushiki Kaisha Toshiba
- Field effect transistor1 Oct 2026US 2026/0304861 A1Denso Corporation
- Silicon carbide substrate, silicon carbide semiconductor device, and method for manufacturing silicon carbide substrate1 Oct 2026US 2026/0304874 A1Sumitomo Electric Industries, Ltd.
- Sic device with vertical field plates and method of manufacturing the same1 Oct 2026US 2026/0304886 A1United Microelectronics Corp.
- Gate trench power semiconductor devices having trench shielding patterns formed during the well implant and related methods17 Sep 2026US 2026/0282464 A1Wolfspeed, Inc.
Most cited
By later US patents
- Silicon carbide semiconductor device and method for producing the same641US 7,829,416 B2Panasonic Corporation · 2010
- Semiconductor devices including implanted regions and protective layers and methods of forming the same103US 7,419,892 B2Cree, Inc. · 2008
- Formation and treatment of epitaxial layer containing silicon and carbon99US 7,741,200 B2APPLIED Materials.Inc. · 2010
- Structure and method for forming power devices with carbon-containing region98US 7,994,573 B2Fairchild Semiconductor Corporation · 2011
- Self-aligned methods of fabricating silicon carbide power devices by implantation and lateral diffusion77US 6,107,142 ACree Research, Inc. · 2000