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US 7,994,573 B2Granted
Structure and method for forming power devices with carbon-containing region
AssigneeFairchild Semiconductor Corporation
InventorJames Pan
Life of this patent
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Abstract
A field effect transistor (FET) includes body regions of a first conductivity type over a semiconductor region of a second conductivity type. The body regions form p-n junctions with the semiconductor region. Source regions of the second conductivity type extend over the body regions. The source regions form p-n junctions with the body regions. Gate electrodes extend adjacent to but are insulated from the body regions by a gate dielectric. A carbon-containing region extends in the semiconductor region below the body regions.
Claims13
A field effect transistor (FET), comprising:
- body regions of a first conductivity type over a semiconductor region of a second conductivity type, the body regions forming p-n junctions with the semiconductor region;
- source regions of the second conductivity type over the body regions, the source regions forming p-n junctions with the body regions;
- gate electrodes extending adjacent to but being insulated from the body regions by a gate dielectric;
- a carbon-containing region of the second conductivity type extending in the semiconductor region below the body regions, wherein the semiconductor region comprises a substrate of the second conductivity type over which the carbon-containing region extends and a drift region of the second conductivity type extending between the carbon-containing region and the body regions.
1 more element
Dependencies are inferred from the claim text.