US 7,419,892 B2 · Semiconductor devices including implanted regions and protective layers and methods of forming the same

Abstract

Methods of forming a semiconductor device include forming a protective layer on a semiconductor layer, implanting ions having a first conductivity type through the protective layer into the semiconductor layer to form an implanted region of the semiconductor layer, and annealing the semiconductor layer and the protective layer to activate the implanted ions. An opening is formed in the protective layer to expose the implanted region of the semiconductor layer, and an electrode is formed in the opening. A semiconductor structure includes a Group III-nitride semiconductor layer, a protective layer on the semiconductor layer, a distribution of implanted dopants within the semiconductor layer, and an ohmic contact extending through the protective layer to the semiconductor layer.

Claims20

Dependent claims

A method of forming a semiconductor device, comprising:

forming a protective layer on a semiconductor layer;
implanting ions having a first conductivity type through the protective layer into the semiconductor layer to form an implanted region of the semiconductor layer;
annealing the semiconductor layer and the protective layer to activate the implanted ions wherein annealing the semiconductor layer and the protective layer comprises annealing in HN3 and SiH4 so that SiN is formed during the anneal;
forming an opening in the protective layer to expose the implanted region of the semiconductor layer;
and
forming an electrode in the opening.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

11/302,062Filed 13 Dec 2005

Published

US 2007/0158683 A112 Jul 2007

Granted

2 Sep 2008

Term ends

Not estimatedThe source records don’t support an estimate.

Classification12 codes

H10D 30/4755
Having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs: having wide bandgap…
H10D 12/031
Manufacture or treatment: of igbts
H10D 30/015
Manufacture or treatment: of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
H10D 62/8325
Being Group IV materials comprising two or more elements, e.g. SiGe: silicon carbide

Semiconductor devices including implanted regions and protective layers and methods of forming the same

Life of this patent

Semiconductor devices including implanted regions and protective layers and methods of forming the same

Life of this patent

Abstract

Claims20