Sic device with vertical field plates and method of manufacturing the same
AssigneeUnited Microelectronics Corp.
InventorPo-Yu Yang
Life of this patent
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Abstract
A SiC device with vertical field plates, including a SiC substrate, a SiC drift region on the front surface of the SiC substrate, multiple field plates within the SiC drift region, wherein the field plates are stacked in the vertical direction and separated by an insulating layer, a gate within the SiC drift region and exposed from the surface of the SiC drift region, the gate being positioned above the field plates and overlapping the field plates in the vertical direction, a source electrode on the SiC drift region, and a drain electrode on the back surface of the SiC substrate.
Claims14
A SiC device with vertical field plates, comprising:
- a SiC substrate with a front side and a back side;
- a SiC drift region positioned on the front surface of the SiC substrate;
- multiple field plates positioned within the SiC drift region, overlapping in a vertical direction and separated by an insulating layer;
- a gate electrode positioned within the SiC drift region and exposed on a surface of the SiC drift region, the gate electrode being positioned above the field plates and overlapping the field plates in the vertical direction;
- a source electrode positioned on the SiC drift region;
- and
- a drain electrode positioned on the back side of the SiC substrate.
A method for manufacturing a SiC device with vertical field plates, comprising:
- providing a SiC substrate;
- forming a first SiC drift region material layer on a front side of the SiC substrate;
- forming a stacked structure on the first SiC drift region material layer, the stacked structure being formed of multiple field plate material layers and first insulating material layers alternately stacked;
- forming a gate electrode material layer on the stacked structure;
- performing a photolithography process to pattern the gate electrode material layer and the stacked structure, such that the gate electrode material layer is patterned into a gate electrode and the field plate material layers are patterned into multiple field plates;
- forming a conformal second insulating material layer on the gate electrode, the field plates, and the first SiC drift region material layer;
- forming a second SiC drift region material layer on the second insulating material layer, the second SiC drift region material layer and the first SiC drift region material layer together forming a SiC drift region;
- and
- forming a source electrode on the SiC drift region and the gate electrode, and forming a drain electrode on a back side of the SiC substrate.
Dependencies are inferred from the claim text.