H10P 30/206
Into group iii-v semiconductors
Official title: {into Group III-V semiconductors}
H10P30/206 (Into group iii-v semiconductors) appears on 547 US grants and 503 published applications in this corpus.
Search patents in H10P- Granted patents
- 547
- Published applications
- 503
- Assignees
- 240
- Inventors
- 1,102
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 6 | 0 |
| 1978 | 3 | 0 |
| 1979 | 7 | 0 |
| 1980 | 2 | 0 |
| 1981 | 5 | 0 |
| 1982 | 3 | 0 |
| 1983 | 6 | 0 |
| 1984 | 5 | 0 |
| 1985 | 12 | 0 |
| 1986 | 7 | 0 |
| 1987 | 14 | 0 |
| 1988 | 4 | 0 |
| 1989 | 5 | 0 |
| 1990 | 4 | 0 |
| 1991 | 5 | 0 |
| 1992 | 5 | 0 |
| 1993 | 7 | 0 |
| 1994 | 6 | 0 |
| 1995 | 5 | 0 |
| 1996 | 0 | 0 |
| 1997 | 2 | 0 |
| 1998 | 4 | 0 |
| 1999 | 7 | 0 |
| 2000 | 11 | 0 |
| 2001 | 4 | 1 |
| 2002 | 5 | 2 |
| 2003 | 2 | 1 |
| 2004 | 1 | 1 |
| 2005 | 0 | 5 |
| 2006 | 1 | 3 |
| 2007 | 1 | 6 |
| 2008 | 4 | 10 |
| 2009 | 2 | 9 |
| 2010 | 5 | 6 |
| 2011 | 7 | 9 |
| 2012 | 8 | 20 |
| 2013 | 8 | 27 |
| 2014 | 23 | 24 |
| 2015 | 39 | 47 |
| 2016 | 29 | 28 |
| 2017 | 28 | 54 |
| 2018 | 46 | 35 |
| 2019 | 44 | 43 |
| 2020 | 31 | 25 |
| 2021 | 23 | 30 |
| 2022 | 21 | 36 |
| 2023 | 22 | 22 |
| 2024 | 22 | 25 |
| 2025 | 19 | 24 |
| 2026 | 15 | 10 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Chip including silicon device and III-V semiconductor device on III-V semiconductor layer8 Sep 2026US 12,733,262 B2GLOBALFOUNDRIES U. S. Inc.
- Semiconductor structure and method for manufacturing the same1 Sep 2026US 12,727,218 B2Enkris Semiconductor, Inc.
- Process for manufacturing localized ion implants in silicon-carbide power electronic devices25 Aug 2026US 12,721,069 B2STMicroelectronics International N. V.
- Control and localization of porosity in III-nitrides and methods of using and making thereof11 Aug 2026US 12,707,907 B2Yale University
- Semiconductor structure comprising a channel layer, a barrier layer, and a P-type semiconductor layer, and manufacturing method having the same thereof21 Jul 2026US 12,690,220 B2Enkris Semiconductor, Inc.
- Gan trench mosfet and fabrication method1 Oct 2026US 2026/0304832 A1SixPoint Materials, Inc.
- Semiconductor structure24 Sep 2026US 2026/0293282 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Iii-v compound semiconductor layer stacks on strain-relieved semiconductor substrates20 Aug 2026US 2026/0247648 A1GLOBALFOUNDRIES U. S. Inc.
- Substrate processing method, method of manufacturing semiconductor device, method of forming hard mask, substrate processing apparatus and non-transitory computer-readable recording medium13 Aug 2026US 2026/0239902 A1Kokusai Electric Corporation
- Fabrication process for hemt devices with field plates25 Jun 2026US 2026/0181934 A1NXP USA, Inc.
Most cited
By later US patents
- High performance gaas devices and method497US 5,436,499 ASpire Corporation · 1995
- Bonded intermediate substrate and method of making same337US 7,732,301 B12010
- Trenched high breakdown voltage semiconductor device170US 6,040,600 AMitsubishi Denki Kabushiki Kaisha · 2000
- Process for fabricating small geometry semiconductive devices including integrated components165US 4,049,944 AHughes Aircraft Company · 1977
- Process for controlling dopant diffusion in a semiconductor layer and semiconductor layer formed thereby142US 5,731,626 ALucent Technologies Inc. · 1998