Iii-v compound semiconductor layer stacks on strain-relieved semiconductor substrates
AssigneeGlobalFoundries U.S. Inc.
InventorsJacob DeAngelis, Mark Levy, Fuad Al-Amoody
Life of this patent
Estimating the term…
Abstract
Structures including a layer stack of compound semiconductor materials arranged on a substrate and methods of forming such structures. The structure comprises a semiconductor substrate including a top surface, a first layer, and a second layer. The first layer is arranged between the second layer and the top surface. The semiconductor substrate comprises a semiconductor material, the semiconductor material of the first layer is single crystal, and the semiconductor material of the second layer is non-single-crystal. The structure further comprises a layer stack on the top surface of the semiconductor substrate.
Claims20
A structure comprising:
- a semiconductor substrate including a top surface, a first layer, and a second layer, the first layer between the second layer and the top surface, the semiconductor substrate comprising a semiconductor material;
- and
- a layer stack on the top surface of the semiconductor substrate,
- wherein the semiconductor material of the first layer is single crystal, and the semiconductor material of the second layer is non-single-crystal.
A structure comprising:
- a semiconductor substrate comprising a single-crystal semiconductor material, the semiconductor substrate including a top surface and a layer adjacent to the top surface, and the layer comprising a concentration of a dopant with atoms having a smaller atomic size than atoms of the single-crystal semiconductor material;
- and
- a layer stack on the top surface of the semiconductor substrate.
A method comprising:
- forming a first layer and a second layer of a semiconductor substrate, wherein the first layer is arranged between the second layer and a top surface of the semiconductor substrate, the semiconductor substrate comprises a semiconductor material, the semiconductor material of the first layer is single crystal, and the semiconductor material of the second layer is non-single-crystal;
- and
- forming a layer stack on the top surface of the semiconductor substrate.
Dependencies are inferred from the claim text.