Semiconductor structure comprising a channel layer, a barrier layer, and a P-type semiconductor layer, and manufacturing method having the same thereof

Abstract

The present disclosure provides a semiconductor structure, including a substrate, a channel layer, a barrier layer, and a P-type semiconductor layer that are distributed from bottom to top, where the barrier layer includes an Al element, and a variation curve of a proportion of Al element in the barrier layer is continuous; where at an interface between the channel layer and the barrier layer, the proportion of Al element in the barrier layer is the same as the proportion of Al element in the channel layer; and at an interface between the barrier layer and the P-type semiconductor layer, the proportion of Al element in the barrier layer is the same as the proportion of Al element in the P-type semiconductor layer.

Dependencies are inferred from the claim text.