H10P 30/224
Of a cluster
Official title: {of a cluster, e.g. using a gas cluster ion beam}
H10P30/224 (Of a cluster) appears on 204 US grants and 220 published applications in this corpus.
Search patents in H10P- Granted patents
- 204
- Published applications
- 220
- Assignees
- 71
- Inventors
- 350
- Latest grant
- 9 Sep 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 2 | 0 |
| 1996 | 1 | 0 |
| 1997 | 3 | 0 |
| 1998 | 1 | 0 |
| 1999 | 3 | 0 |
| 2000 | 1 | 0 |
| 2001 | 4 | 0 |
| 2002 | 2 | 3 |
| 2003 | 1 | 2 |
| 2004 | 4 | 7 |
| 2005 | 4 | 8 |
| 2006 | 3 | 6 |
| 2007 | 4 | 15 |
| 2008 | 7 | 18 |
| 2009 | 9 | 14 |
| 2010 | 15 | 7 |
| 2011 | 19 | 14 |
| 2012 | 9 | 19 |
| 2013 | 16 | 13 |
| 2014 | 11 | 10 |
| 2015 | 12 | 12 |
| 2016 | 15 | 17 |
| 2017 | 14 | 15 |
| 2018 | 8 | 12 |
| 2019 | 14 | 6 |
| 2020 | 6 | 10 |
| 2021 | 7 | 4 |
| 2022 | 1 | 2 |
| 2023 | 4 | 3 |
| 2024 | 1 | 2 |
| 2025 | 1 | 0 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Epitaxial silicon wafer, method for producing same, and method for producing semiconductor device9 Sep 2025US 12,414,388 B2Sumco Corporation
- Semiconductor epitaxial wafer and method of producing semiconductor epitaxial wafer, and method of producing solid-state imaging device19 Mar 2024US 11,935,745 B2Sumco Corporation
- Method and apparatus for forming substrate surfaces with exposed crystal lattice using accelerated neutral atom beam22 Aug 2023US 11,735,432 B2Exogenesis Corporation
- Method for modifying the wettability and/or other biocompatibility characteristics of a surface of a biological material by the application of gas cluster ion beam technology and biological materials made thereby11 Jul 2023US 11,698,582 B2Exogenesis Corporation
- Semiconductor epitaxial wafer and method of producing semiconductor epitaxial wafer, and method of producing solid-state imaging device2 May 2023US 11,640,907 B2Sumco Corporation
- Stitching defect reduction using gas cluster beam19 Mar 2026US 2026/0082868 A1Tel Manufacturing and Engineering of America, Inc.
- Method of producing semiconductor epitaxial wafer, semiconductor epitaxial wafer, and method of producing solid-state image sensing device5 Sep 2024US 2024/0297201 A1Sumco Corporation
- Method of producing semiconductor epitaxial wafer, semiconductor epitaxial wafer, and method of producing solid-state image sensing device22 Aug 2024US 2024/0282801 A1Sumco Corporation
- Epitaxial silicon wafer, method for producing same, and method for producing semiconductor device5 Oct 2023US 2023/0317761 A1Sumco Corporation
- Semiconductor epitaxial wafer and method of producing semiconductor epitaxial wafer, and method of producing solid-state imaging device6 Jul 2023US 2023/0215730 A1Sumco Corporation
Most cited
By later US patents
- Single-crystal silicon substrate, SOI substrate, semiconductor device, display device, and manufacturing method of semiconductor device315US 7,508,034 B2Sharp Kabushiki Kaisha · 2009
- Semiconductor device and manufacturing method of the same129US 6,930,360 B2Kabushiki Kaisha Toshiba · 2005
- Semiconductor device and manufacturing method of the same118US 7,186,598 B2Kabushiki Kaisha Toshiba · 2007
- Methods of forming doped and un-doped strained semiconductor materials and semiconductor films by gas-cluster-ion-beam irradiation and materials and film products112US 7,259,036 B2TEL Epion Inc. · 2007
- Semiconductor device having buried boron and carbon regions100US 6,198,157 B1Hitachi, Ltd. · 2001