Back to results
US 11,640,907 B2Granted
Semiconductor epitaxial wafer and method of producing semiconductor epitaxial wafer, and method of producing solid-state imaging device
AssigneeSumco Corporation
InventorRyosuke Okuyama
Life of this patent
Estimating the term…
Abstract
An epitaxial wafer that includes a silicon wafer and an epitaxial layer on the silicon wafer. The silicon wafer contains hydrogen that has a concentration profile including a first peak and a second peak. A hydrogen peak concentration of the first peak and a hydrogen peak concentration of the second peak are each not less than 1×1017 atoms/cm3.
Claims10
An epitaxial wafer, comprising:
- a silicon wafer;
- and
- an epitaxial layer on the silicon wafer;
- wherein:
- the silicon wafer comprises hydrogen that has a concentration profile including a first peak shallower in a depth direction from a surface of the epitaxial layer and a second peak, a hydrogen peak concentration of the first peak and a hydrogen peak concentration of the second peak are each not less than 1×1017 atoms/cm3;
- and
- the hydrogen peak concentration of the second peak is greater than the hydrogen peak concentration of the first peak.
4 more elements
An epitaxial wafer, comprising:
- a silicon wafer;
- an epitaxial layer on the silicon wafer;
- and
- a modifying layer in the silicon wafer, the modifying layer comprising carbon, hydrogen and oxygen;
- wherein the hydrogen has a concentration profile including a first peak shallower in a depth direction from a surface of the epitaxial layer and a second peak, a hydrogen peak concentration of the first peak and a hydrogen peak concentration of the second peak are each not less than 1×1017 atoms/cm3.
2 more elements
Dependencies are inferred from the claim text.