Semiconductor device and manufacturing method of the same
AssigneeKabushiki Kaisha Toshiba
InventorsJun Yamauchi, Nobutoshi Aoki
Life of this patent
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Abstract
A semiconductor device having a semiconductor layer, includes: a first impurity atom having a covalent bond radius larger than a minimum radius of a covalent bond of a semiconductor constituent atom of a semiconductor layer; and a second impurity atom having a covalent bond radius smaller than a maximum radius of the covalent bond of the semiconductor constituent atom; wherein the first and second impurity atoms are arranged in a nearest neighbor lattice site location and at least one of the first and second impurity atoms is electrically active.
Claims21
A semiconductor device having a semiconductor layer, comprising:
- a first impurity atom having a covalent bond radius larger than a minimum radius of a covalent bond of a semiconductor constituent atom of the semiconductor layer;
- and
- a second impurity atom having a covalent bond radius smaller than a maximum radius of the covalent bond of the semiconductor constituent atom,
- the second impurity atom arranged in a nearest neighbor lattice site location for the first impurity atom;
- wherein at least one of the first and second impurity atoms is electrically active.
A semiconductor device having a semiconductor layer, comprising:
- a first impurity atom having a covalent bond radius larger than a minimum radius of a covalent bond of a semiconductor constituent atom of the semiconductor layer;
- and
- a second impurity atom having a covalent bond radius smaller than a maximum radius of the covalent bond of the semiconductor constituent atom;
- wherein the first and second impurity atoms are arranged in a nearest neighbor lattice site location, at least one of the first and second impurity atoms being electrically active, and one of the first and second impurity atoms produces a deep impurity level near a middle of a band gap of the semiconductor layer when a pair of the one of the first and second impurity atoms are arranged in a nearest neighbor lattice site location.
A semiconductor device having a semiconductor layer, comprising:
- a first impurity atom having a covalent bond radius larger than a minimum radius of a covalent bond of a semiconductor constituent atom of the semiconductor layer;
- and
- a second impurity atom having a covalent bond radius smaller than a maximum radius of the covalent bond of the semiconductor constituent atom;
- wherein the first and second impurity atoms are arranged in a nearest neighbor lattice site location, at least one of the first and second impurity atoms being electrically active to be an acceptor or a donor for the semiconductor layer, and one of the first and second impurity atoms produces a deep impurity level near a middle of a band gap of the semiconductor layer when a pair of the one of the first and second impurity atoms are arranged in a nearest neighbor lattice site location.
A semiconductor device having a semiconductor layer, comprising:
- a first impurity atom having a covalent bond radius larger than a minimum radius of a covalent bond of a semiconductor constituent atom of the semiconductor layer;
- and
- a second impurity atom having a covalent bond radius smaller than a maximum radius of the covalent bond of the semiconductor constituent atom;
- wherein the first and second impurity atoms are arranged in a nearest neighbor lattice site location, at least one of the first and second impurity atoms being electrically active, a doping concentration of the one of the first and second impurity atoms being equal to or larger than an electrically active impurity concentration specific to the one of the first and second impurity atoms, and one of the first and second impurity atoms produces a deep impurity level near a middle of a band gap of the semiconductor layer when a pair of the one of the first and second impurity atoms are arranged in a nearest neighbor lattice site location.
Dependencies are inferred from the claim text.