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US 7,186,598 B2Granted
Semiconductor device and manufacturing method of the same
AssigneeKabushiki Kaisha Toshiba
InventorsJun Yamauchi, Nobutoshi Aoki
Life of this patent
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Abstract
A semiconductor device having a semiconductor layer, includes: a first impurity atom having a covalent bond radius larger than a minimum radius of a covalent bond of a semiconductor constituent atom of a semiconductor layer; and a second impurity atom having a covalent bond radius smaller than a maximum radius of the covalent bond of the semiconductor constituent atom; wherein the first and second impurity atoms are arranged in a nearest neighbor lattice site location and at least one of the first and second impurity atoms is electrically active.
Claims7
A manufacturing method of a semiconductor device, comprising:
- providing a semiconductor substrate;
- doping a first impurity atom having a covalent bond radius larger than a minimum radius of a covalent bond of a semiconductor constituent atom of a semiconductor layer of the semiconductor substrate;
- and
- doping a second impurity atom having a covalent bond radius smaller than a maximum radius of a covalent bond of the semiconductor constituent atom so as to be arranged in a nearest neighbor lattice site of the first impurity atom.
1 more element
Dependencies are inferred from the claim text.