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US 11,935,745 B2Granted
Semiconductor epitaxial wafer and method of producing semiconductor epitaxial wafer, and method of producing solid-state imaging device
AssigneeSumco Corporation
InventorRyosuke Okuyama
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Abstract
An epitaxial wafer that includes a silicon wafer and an epitaxial layer on the silicon wafer. The silicon wafer contains hydrogen that has a concentration profile including a first peak and a second peak. A hydrogen peak concentration of the first peak and a hydrogen peak concentration of the second peak are each not less than 1×1017 atoms/cm3.
Claims10
An epitaxial wafer, comprising:
- a silicon wafer comprising hydrogen, the hydrogen having a concentration profile including a first peak and a second peak;
- an epitaxial layer on the silicon wafer, the epitaxial layer having a top surface;
- wherein the epitaxial layer further has a transverse optical intensity (TOI) profile in a depth direction of the epitaxial layer that has a third peak which is closer to a boundary between the epitaxial layer and the silicon wafer than to the top surface, the boundary being opposite to the top surface.
An epitaxial wafer, comprising:
- a silicon wafer;
- a modifying layer in the silicon wafer comprising hydrogen that has a concentration profile including a first peak and a second peak;
- an epitaxial layer on the silicon wafer, the epitaxial layer having a top surface;
- wherein the epitaxial layer further has a transverse optical intensity (TOI) profile in a depth direction of the epitaxial layer that has a third peak which is closer to a boundary between the epitaxial layer and the silicon wafer than to the top surface, the boundary being opposite to the top surface.
1 more element
Dependencies are inferred from the claim text.