H10W 20/41
Characterised by their conductive parts
Official title: characterised by their conductive parts
H10W20/41 (Characterised by their conductive parts) appears on 27,395 US grants and 31,861 published applications in this corpus.
Search patents in H10W- Granted patents
- 27,395
- Published applications
- 31,861
- Assignees
- 1,957
- Inventors
- 30,064
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 11 | 0 |
| 1977 | 13 | 0 |
| 1978 | 20 | 0 |
| 1979 | 16 | 0 |
| 1980 | 16 | 0 |
| 1981 | 21 | 0 |
| 1982 | 16 | 0 |
| 1983 | 15 | 0 |
| 1984 | 20 | 0 |
| 1985 | 41 | 0 |
| 1986 | 36 | 0 |
| 1987 | 52 | 0 |
| 1988 | 49 | 0 |
| 1989 | 54 | 0 |
| 1990 | 105 | 0 |
| 1991 | 124 | 0 |
| 1992 | 122 | 0 |
| 1993 | 116 | 0 |
| 1994 | 128 | 0 |
| 1995 | 132 | 0 |
| 1996 | 138 | 0 |
| 1997 | 170 | 0 |
| 1998 | 205 | 0 |
| 1999 | 267 | 0 |
| 2000 | 304 | 0 |
| 2001 | 344 | 168 |
| 2002 | 445 | 458 |
| 2003 | 385 | 415 |
| 2004 | 401 | 463 |
| 2005 | 330 | 488 |
| 2006 | 335 | 448 |
| 2007 | 311 | 482 |
| 2008 | 307 | 538 |
| 2009 | 282 | 533 |
| 2010 | 401 | 557 |
| 2011 | 482 | 448 |
| 2012 | 440 | 579 |
| 2013 | 538 | 637 |
| 2014 | 746 | 1030 |
| 2015 | 956 | 1390 |
| 2016 | 1430 | 1564 |
| 2017 | 1756 | 1850 |
| 2018 | 1730 | 1689 |
| 2019 | 1711 | 1888 |
| 2020 | 1842 | 2210 |
| 2021 | 1747 | 2217 |
| 2022 | 1601 | 2350 |
| 2023 | 1691 | 2461 |
| 2024 | 1794 | 2767 |
| 2025 | 1947 | 2671 |
| 2026 | 1252 | 1560 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10W 20/42Vias11,818
- H10W 20/43Layouts of interconnections8,089
- H10W 20/425Barrier, adhesion or liner layers6,851
- H10W 20/44Conductive materials thereof5,854
- H10W 20/435Cross-sectional shapes or dispositions of interconnections5,066
- H10W 20/427Power or ground buses3,193
- H10W 20/423Shielding layers965
- H10W 20/438Interconnections with multiple fill metals246
Recent patents
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- Vertical transistors with backside power delivery6 Oct 2026US 12,757,371 B2Apple Inc.
- Memory cell with reduced parasitic capacitance and conductive via extending into source/drain region6 Oct 2026US 12,757,383 B2Nanya Technology Corporation
- Interconnect structure and method of forming same8 Oct 2026US 2026/0306859 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Memory device8 Oct 2026US 2026/0311751 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Ternary content-addressable memory cells and methods for forming the same8 Oct 2026US 2026/0311760 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor devices and methods of fabricating the same8 Oct 2026US 2026/0313865 A1Samsung Electronics Co., Ltd.
- Memory device with alternating metal lines8 Oct 2026US 2026/0313866 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method of fabricating interconnect structure for package-on-package devices1,078US 9,048,222 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Dummy structure for chip-on-wafer-on-substrate961US 9,425,126 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Production of elemental thin films using a boron-containing reducing agent809US 6,475,276 B1ASM Microchemistry Oy · 2002
- Method of producing titanium nitride MOS device gate electrode640US 4,570,328 AMotorola, Inc. · 1986
- Plated copper interconnect structure621US 5,969,422 AAdvanced Micro Devices, Inc. · 1999