H10W 20/44
Conductive materials thereof
H10W20/44 (Conductive materials thereof) appears on 5,854 US grants and 6,006 published applications in this corpus.
Search patents in H10W- Granted patents
- 5,854
- Published applications
- 6,006
- Assignees
- 830
- Inventors
- 8,781
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 8 | 0 |
| 1978 | 10 | 0 |
| 1979 | 6 | 0 |
| 1980 | 8 | 0 |
| 1981 | 11 | 0 |
| 1982 | 9 | 0 |
| 1983 | 8 | 0 |
| 1984 | 7 | 0 |
| 1985 | 21 | 0 |
| 1986 | 16 | 0 |
| 1987 | 21 | 0 |
| 1988 | 19 | 0 |
| 1989 | 20 | 0 |
| 1990 | 36 | 0 |
| 1991 | 62 | 0 |
| 1992 | 42 | 0 |
| 1993 | 54 | 0 |
| 1994 | 44 | 0 |
| 1995 | 47 | 0 |
| 1996 | 50 | 0 |
| 1997 | 61 | 0 |
| 1998 | 52 | 0 |
| 1999 | 60 | 0 |
| 2000 | 86 | 0 |
| 2001 | 95 | 49 |
| 2002 | 118 | 132 |
| 2003 | 88 | 78 |
| 2004 | 70 | 91 |
| 2005 | 65 | 70 |
| 2006 | 60 | 84 |
| 2007 | 60 | 88 |
| 2008 | 53 | 83 |
| 2009 | 48 | 96 |
| 2010 | 80 | 90 |
| 2011 | 93 | 84 |
| 2012 | 48 | 98 |
| 2013 | 101 | 119 |
| 2014 | 156 | 271 |
| 2015 | 243 | 363 |
| 2016 | 351 | 383 |
| 2017 | 434 | 454 |
| 2018 | 415 | 447 |
| 2019 | 415 | 481 |
| 2020 | 446 | 445 |
| 2021 | 357 | 407 |
| 2022 | 283 | 401 |
| 2023 | 302 | 393 |
| 2024 | 277 | 316 |
| 2025 | 297 | 302 |
| 2026 | 138 | 181 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Composition and method for treating substrate6 Oct 2026US 12,753,342 B2FUJIFILM Corporation
- Integrated circuit (IC) device with hybrid metal layer6 Oct 2026US 12,757,708 B2Intel Corporation
- Semiconductor device and electronic system including the same6 Oct 2026US 12,757,720 B2Samsung Electronics Co., Ltd.
- Semiconductor structure and manufacturing method thereof29 Sep 2026US 12,751,258 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Selective deposition using graphene as an inhibitor29 Sep 2026US 12,751,261 B2Lam Research Corporation
- Interconnect structure and method of forming same8 Oct 2026US 2026/0306859 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device structure and methods of forming the same8 Oct 2026US 2026/0314053 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device including a self-formed barrier metal layer8 Oct 2026US 2026/0314351 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Package structure and method for fabricating the same8 Oct 2026US 2026/0314354 A1National Yang Ming.Chiao Tung University
- Conductive structures and methods of forming the same8 Oct 2026US 2026/0314355 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Production of elemental thin films using a boron-containing reducing agent809US 6,475,276 B1ASM Microchemistry Oy · 2002
- Method of producing titanium nitride MOS device gate electrode640US 4,570,328 AMotorola, Inc. · 1986
- Plated copper interconnect structure621US 5,969,422 AAdvanced Micro Devices, Inc. · 1999
- Method and structure to improve reliability of copper interconnects562US 7,129,165 B2ASM Nutool, Inc. · 2006
- Method of manufacturing a contact interconnection layer containing a metal and nitrogen by atomic layer deposition for deep sub-micron semiconductor technology532US 7,235,482 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2007