Method of manufacturing a contact interconnection layer containing a metal and nitrogen by atomic layer deposition for deep sub-micron semiconductor technology

An atomic layer deposition (ALD) process for depositing a metal nitride layer comprised of a plurality of metal nitride monolayers on a substrate, comprising:

• (a) providing a substrate with a patterned layer formed thereon, the patterned layer comprises an opening;
• (b) loading the substrate in an ALD process chamber and adjusting the temperature and pressure in said ALD process chamber to acceptable levels;
• (c) flowing a metal precursor into said ALD process chamber so that said metal precursor is deposited on said substrate, wherein said metal precursor comprises at least one of Ti{OCH(CH3)2}4, and TDEAT;
• (d) purging said ALD process chamber with an inert gas to leave a monolayer of metal precursor on said substrate;
• (e) flowing a nitrogen containing reactant into said ALD process chamber, said nitrogen containing reactant reacts with said metal precursor monolayer to form a metal nitride monolayer;
• (f) purging said ALD process chamber to remove unreacted nitrogen containing reactant;
• and
• (g) repeating the sequence of steps (c), (d), (e), (f) until the metal nitride layer fills the opening to form a metal nitride plug.

A method of forming a metal nitride layer on a substrate, said substrate comprised of an upper dielectric layer having at least one opening, comprising:

• (a) providing a substrate having an upper dielectric layer that has a pattern formed therein comprised of at least one opening;
• (b) loading the substrate in an ALD process chamber and adjusting the temperature and pressure in said ALD process chamber to acceptable levels;
• (c) flowing a metal precursor into said ALD process chamber so that said metal precursor is deposited on said substrate, wherein said metal precursor comprises at least one of Ti{OCH(CH3)2}4, and TDEAT;
• (d) purging said chamber with an inert gas to leave a monolayer of metal precursor on said substrate;
• (e) flowing a nitrogen containing reactant into said ALD process chamber, said nitrogen containing reactant reacts with said metal precursor monolayer to give a metal nitride monolayer on said substrate;
• (f) purging said ALD process chamber to remove unreacted nitrogen containing reactant;
• (g) repeating the sequence of steps (c), (d), (e), (f) to deposit a plurality of metal nitride monolayers which form a composite layer that fills said opening to form a metal nitride plug;
• and
• (h) planarizing said composite layer to be coplanar with said dielectric layer.

A method for forming an interconnect:

• providing a substrate;
• forming a conductive layer within the substate;
• depositing a dielectric layer on the substate;
• forming an opening within the dielectric layer;
• depositing a titanium-containing composite layer on the substrate to fill the opening;
• and
• planarizing the titanium-containing composite layer to be coplanar with the dielectric layer, wherein depositing the titanium-containing composite layer comprises flowing a metal precursor that comprises at least one of Ti{OCH(CH3)2}4, and TDEAT into a chamber, wherein depositing a composite layer on the substrate further comprises:
• purging an inert gas into the chamber to remove metal precursor not bonded to the substrate;
• flowing a nitrogen-containing reactant into the chamber to form one of the plurality of metal nitride monolayer;
• and
• purging an inert gas into the chamber to remove nitrogen-containing reactant not reacted with the mental precursor, and
• wherein the purging step for purging an inert gas to remove metal precursor not bonded to the substrate, the flowing step for flowing a nitrogen-containing reactant into the chamber to form one of the plurality of metal nitride monolayer, and the purging step for purging an inert gas into the chamber to remove nitrogen-containing reactant not reached with the metal precursor are performed repeatedly until the composite layer fills the opening to form a titanium-containing composite plug.