H10W 20/4462
Carbon or carbon-containing materials
Official title: {Carbon or carbon-containing materials, e.g. graphene}
H10W20/4462 (Carbon or carbon-containing materials) appears on 459 US grants and 604 published applications in this corpus.
Search patents in H10W- Granted patents
- 459
- Published applications
- 604
- Assignees
- 154
- Inventors
- 817
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1996 | 2 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 2 | 0 |
| 2002 | 2 | 3 |
| 2003 | 1 | 5 |
| 2004 | 1 | 6 |
| 2005 | 4 | 14 |
| 2006 | 8 | 18 |
| 2007 | 9 | 28 |
| 2008 | 12 | 25 |
| 2009 | 9 | 28 |
| 2010 | 19 | 29 |
| 2011 | 22 | 25 |
| 2012 | 19 | 26 |
| 2013 | 35 | 31 |
| 2014 | 30 | 38 |
| 2015 | 47 | 52 |
| 2016 | 34 | 48 |
| 2017 | 37 | 33 |
| 2018 | 30 | 28 |
| 2019 | 26 | 18 |
| 2020 | 19 | 19 |
| 2021 | 13 | 12 |
| 2022 | 14 | 23 |
| 2023 | 15 | 31 |
| 2024 | 12 | 21 |
| 2025 | 23 | 29 |
| 2026 | 13 | 14 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Selective deposition using graphene as an inhibitor29 Sep 2026US 12,751,261 B2Lam Research Corporation
- Interconnect structure and electronic device including the same29 Sep 2026US 12,751,281 B2Samsung Electronics Co., Ltd.
- Structure having 2D material capping layer and manufacturing method thereof8 Sep 2026US 12,733,464 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit structure and method for forming the same25 Aug 2026US 12,720,834 B2National Taiwan University
- Semiconductor structure having verticle conductive graphene and method for forming the same25 Aug 2026US 12,721,154 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Interconnection structure and method for fabricating the same8 Oct 2026US 2026/0314386 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure having vertical conductive graphene and method for forming the same17 Sep 2026US 2026/0282857 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device having graphene interconnect17 Sep 2026US 2026/0282887 A1Tokyo Electron Limited
- Electrical contact conductor25 Jun 2026US 2026/0182354 A1Zhejiang Chint Electrics Co., Ltd.
- Graphene cap layer with composite etch stop layer18 Jun 2026US 2026/0173857 A1International Business Machines Corporation
Most cited
By later US patents
- Contact structure and memory element incorporating the same477US 6,031,287 AMicron Technology, Inc. · 2000
- Nanotube films and articles330US 6,706,402 B2Nantero, Inc. · 2004
- Nanosensors247US 7,129,554 B2President and Fellows of Harvard College · 2006
- Article comprising vertically nano-interconnected circuit devices and method for making the same229US 6,340,822 B12002
- Article comprising vertically nano-interconnected circuit devices and method for making the same150US 6,383,923 B1Agere Systems Guardian Corp. · 2002