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US 2026/0314386 A1Published application
Interconnection structure and method for fabricating the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKai-Fang CHENG, Cherng-Shiaw TSAI, Cheng-Chin LEE, Yen-Ju WU, Hsiao-Kang CHANG
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Abstract
An interconnection structure is provided to include an interlayer dielectric (ILD) layer that is disposed over a substrate, a metal via that is disposed in the ILD layer, and a metal wire that is disposed over the metal via in the ILD layer and that is electrically connected to the metal via. The ILD layer includes silicon carbon nitride.
Claims20
An interconnection structure, comprising:
- a first silicon carbon nitride (SiCN) layer disposed over a substrate,
- a metal via disposed in the first SiCN layer;
- a metal wire disposed over the metal via in the first SiCN layer, and electrically connected to the metal via;
- a second SiCN layer disposed over the metal wire and the first SiCN layer;
- and
- a conductive cap feature disposed over the metal wire and surrounded by the second SiCN layer,
- wherein a material composition of the conductive cap feature is different from a material composition of the metal wire.
4 more elements
An interconnection structure, comprising:
- a dielectric layer disposed over a substrate;
- a metal feature surrounded by the dielectric layer;
- a first conductive cap feature disposed over the metal feature;
- a hermetic etch stop layer disposed over the dielectric layer and surrounding the first conductive cap feature;
- a first metal via disposed over and electrically connected to the metal feature, and having a bottom portion surrounded by the hermetic etch stop layer;
- a first silicon carbon nitride (SiCN) layer disposed over the hermetic etch stop layer and surrounding the first metal via;
- a first metal wire disposed in the first SiCN layer and electrically connected to the first metal via;
- a second conductive cap feature disposed over and electrically connected to the first metal wire;
- and
- a second SiCN layer disposed over the first SiCN layer and surrounding the second conductive cap feature,
- wherein a material composition of the hermetic etch stop layer is different from a material composition of the first SiCN layer.
8 more elements
An interconnection structure, comprising:
- a first SiCN layer disposed over a substrate;
- a second SiCN layer disposed over the first SiCN layer;
- a conductive cap feature disposed in a bottom portion of the second SiCN layer;
- a metal wire disposed in a first portion of the first SiCN layer and electrically connected to the conductive cap feature;
- and
- a metal via disposed in a second portion of the first SiCN layer and electrically connected to the metal wire, where the first portion of the first SiCN layer is disposed between the second SiCN layer and the second portion of the first SiCN layer.
3 more elements
Dependencies are inferred from the claim text.