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US 12,751,281 B2Granted
Interconnect structure and electronic device including the same
AssigneeSamsung Electronics Co., Ltd.
InventorsKeunwook Shin, Sangwon Kim, Kyung-Eun Byun, Joungeun Yoo, Eunkyu Lee, Changseok Lee, Alum Jung
Life of this patent
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Abstract
An interconnect structure may include a dielectric layer including a trench, a conductive wiring including graphene filling an inside of the trench, and a liner layer in contact with at least one surface of the conductive wiring and including a metal.
Claims18
An interconnect structure comprising:
- a dielectric layer including a trench;
- a conductive wiring disposed in the trench, the conductive wiring including graphene;
- and
- a liner layer contacting at least one surface of the conductive wiring, the liner layer including a metal,
- wherein
- a width of the trench in a first direction through the graphene of the conductive wiring is equal to a sum of a width of a first portion of the liner layer, a width of the graphene in the conductive wiring, and a width of a second portion of the liner layer,
- the first portion of the liner layer and the second portion of the liner layer are on opposite sides of the conductive wiring, and
- the width of the graphene in the conductive wiring corresponds to a thickness of the graphene in the first direction.
5 more elements
Dependencies are inferred from the claim text.