Semiconductor structure having vertical conductive graphene and method for forming the same

A method for manufacturing a semiconductor structure, comprising:

• patterning a dielectric layer disposed on a contact feature, such that the dielectric layer is formed into a patterned dielectric layer having an interconnect opening that exposes the contact feature;
• depositing a metal layer on the patterned dielectric layer, the metal layer reacting with the patterned dielectric layer to form a metal silicate layer connected between the metal layer and the patterned dielectric layer;
• and
• depositing a graphene conductive structure on the metal layer, such that the graphene conductive structure fills the interconnecting opening, the graphene conductive structure being electrically connected to the contact feature.

A method for manufacturing a semiconductor structure, comprising:

• patterning a dielectric layer disposed on a contact feature, such that the dielectric layer is formed into a patterned dielectric layer having an interconnect opening that exposes the contact feature;
• depositing a metal layer on the patterned dielectric layer, the metal layer reacting with the patterned dielectric layer to form a metal silicate layer connected between the metal layer and the patterned dielectric layer;
• depositing a graphene conductive structure on the metal layer, such that the graphene conductive structure fills the interconnecting opening, the graphene conductive structure being electrically connected to the contact feature;
• and
• depositing a mask layer on a portion of the graphene conductive structure formed in the interconnecting opening.