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US 12,733,464 B2Granted
Structure having 2D material capping layer and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShu-Wei Li, Shin-Yi Yang
Life of this patent
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Abstract
A structure including a conductive region, a dielectric region, and a capping layer is provided. The conductive region is disposed on or embedded in the dielectric region. The capping layer is disposed on the conductive region. A material of the capping layer includes a 2D material.
Claims20
A structure comprising:
- a conductive region and a dielectric region, wherein the conductive region is disposed on or embedded in the dielectric region;
- a capping layer, disposed on the conductive region, wherein a material of the capping layer comprises a 2D material;
- and
- a first insulating layer, comprising a first portion in contact with the capping layer and a second portion in contact with the dielectric region,
- wherein a maximum thickness of the second portion is thicker than a maximum thickness of the first portion,
- a topmost surface of the first portion is lower than a topmost surface of the second portion, and
- the capping layer is disposed between the conductive region and the first insulating layer, and the conductive region and the first insulating layer are spaced apart from each other by the capping layer.
4 more elements
A structure comprising:
- a conductive region and a dielectric region, wherein the conductive region is disposed on or embedded in the dielectric region;
- a capping layer, disposed on the conductive region, wherein a material of the capping layer comprises a 2D material;
- and
- a first insulating layer, disposed on the dielectric region and the capping layer,
- wherein a top surface of the first insulating layer and a top surface of the capping layer are not coplanar,
- a top surface of the conductive region, a top surface of the dielectric region, a bottom surface of the capping layer, and a bottom surface of the first insulating layer are coplanar,
- the first insulating layer comprises a first portion vertically overlapping the capping layer and a second portion vertically overlapping the dielectric region,
- a top surface of the second portion comprises a downward slope adjacent to an interface between the first portion and the second portion such that a topmost surface of the first portion is lower than a topmost surface of the second portion, and
- the capping layer is disposed between the conductive region and the first insulating layer, and the conductive region and the first insulating layer are spaced apart from each other by the capping layer.
6 more elements
A method comprising:
- providing a structure comprising a conductive region and a dielectric region, wherein the conductive region is disposed on or embedded in the dielectric region;
- forming a capping layer disposed on the conductive region, wherein a material of the capping layer comprises a 2D material;
- and
- forming a first insulating layer comprising a first portion in contact with the capping layer and a second portion in contact with the dielectric region,
- wherein a maximum thickness of the second portion is thicker than a maximum thickness of the first portion,
- a topmost surface of the first portion is lower than a topmost surface of the second portion,
- the capping layer is disposed between the conductive region and the first insulating layer, and the conductive region and the first insulating layer are spaced apart from each other by the capping layer, and
- a top surface of the first insulating layer and a top surface of the capping layer are not coplanar.
5 more elements
Dependencies are inferred from the claim text.