Semiconductor device having graphene interconnect
AssigneeTokyo Electron Limited
InventorKandabara Tapily
Life of this patent
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Abstract
A method for making a semiconductor device can include providing a first intermediate structure including a first dielectric layer, the first dielectric layer having a first hole formed therein, where the first hole opens to an underlying conductive structure, forming a graphene-nucleation liner on a first-hole sidewall of the first hole, and forming a multi-layer-graphene structure on the graphene-nucleation liner, where the multi-layer-graphene structure includes graphene sheets, such that each of the graphene sheets has a sheet plane aligned with the first-hole sidewall of the first hole.
Claims20
A semiconductor device comprising:
- a first dielectric layer having a first hole therein;
- a first graphene-nucleation liner on a first-hole sidewall of the first hole;
- and
- a first multi-layer-graphene structure on the first graphene-nucleation liner, wherein the first multi-layer-graphene structure comprises graphene sheets, wherein each of the graphene sheets has a sheet plane aligned with the first-hole sidewall of the first hole.
A method for making a semiconductor device, the method comprising:
- providing a first intermediate structure comprising a first dielectric layer, the first dielectric layer having a first hole formed therein, wherein the first hole opens to an underlying conductive structure;
- forming a first graphene-nucleation liner on a first-hole sidewall of the first hole;
- and
- forming a first multi-layer-graphene structure on the first graphene-nucleation liner, wherein the first multi-layer-graphene structure comprises graphene sheets, such that each of the graphene sheets has a sheet plane aligned with the first-hole sidewall of the first hole.
A method for making a semiconductor device, the method comprising:
- providing a first intermediate structure comprising a first dielectric layer, the first dielectric layer having a via hole formed therein, wherein the via hole opens to an underlying conductive structure;
- forming a first graphene-nucleation liner on a via-hole sidewall of the via hole;
- forming a first multi-layer-graphene structure on the first graphene-nucleation liner, wherein the first multi-layer-graphene structure comprises graphene sheets, such that each of the graphene sheets has a sheet plane aligned with the via-hole sidewall of the via hole;
- forming a second dielectric layer on at least part of the first dielectric layer, wherein the second dielectric layer includes a trench therein, wherein at least part of the trench opens to the first multi-layer-graphene structure of the via hole;
- forming a second graphene-nucleation liner on a trench sidewall of the trench;
- and
- forming a second multi-layer-graphene structure on the second graphene-nucleation liner such that the second multi-layer-graphene structure is planarly aligned with the trench sidewall of the trench and such that the second multi-layer-graphene structure is electrically connected to the underlying conductive structure via the first multi-layer-graphene structure.
Dependencies are inferred from the claim text.