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US 6,031,287 AGranted
Contact structure and memory element incorporating the same
AssigneeMicron Technology, Inc.
InventorSteven T. Harshfield
Life of this patent
Estimating the term…
Abstract
Annular and linear contact structures are described which exhibit a greatly reduced susceptibility to process deviations caused by lithographic and deposition variations than does a conventional circular contact plug. In one embodiment, a standard conductive material such as carbon or titanium nitride is used to form the contact. In an alternative embodiment, a memory material itself is used to form the contact. These contact structures may be made by various processes, including chemical mechanical planarization and facet etching.
Claims59
A contact structure for a semiconductor device comprising:
- a substrate having a conductive portion;
- a first insulative layer disposed on said conductive portion;
- a contact hole formed in said first insulative layer and ex-posing at least a portion of said conductive portion, said contact hole having a bottom surface and a sidewall surface;
- a layer of material disposed on said bottom surface and said sidewall surface, said layer of material partially filling said contact hole, wherein said layer of material comprises one of a conductive material or a memory material;
- a second insulative layer disposed on said layer of material within said contact hole, wherein a peripheral portion of said layer of material is exposed.
2 more elements
A non-volatile memory element comprising:
- a substrate having a conductive region;
- a first insulative layer formed on said conductive region;
- a contact hole formed in said first insulative layer and exposing at least a portion of said conductive region, said contact hole having a bottom surface and a sidewall surface;
- a first layer of material disposed on said bottom surface and said sidewall surface, said first layer of material partially filling said contact hole, wherein said first layer of material comprises a first conductive material;
- a second insulative layer disposed on said first layer of material in said contact hole, said second insulative layer filling said contact hole and leaving exposed a peripheral portion of said first layer of material on said sidewall surface;
- a second layer of material formed over at least a portion of said exposed peripheral portion of said first layer of material, said second layer of material comprising a memory material;
- and
- a conductive layer formed over said second layer of material.
5 more elements
A contact structure for a semiconductor device comprising:
- a substrate having a conductive portion;
- a first insulative layer disposed on said conductive portion;
- a contact hole formed in said first insulative layer and exposing at least a portion of said conductive portion, said contact hole having a bottom surface and a sidewall surface;
- a layer of memory material disposed on said bottom surface and said sidewall surface, said layer of memory material partially filling said contact hole;
- a second insulative layer disposed on said layer of memory material within said contact hole, wherein a peripheral portion of said layer of memory material is exposed.
2 more elements
A non-volatile memory element comprising:
- a substrate having a conductive region;
- a first insulative layer formed on said conductive region;
- a contact hole formed in said first insulative layer and exposing at least a portion of said conductive region, said contact hole having a bottom surface and a sidewall surface;
- a layer of conductive material disposed on said bottom surface and said sidewall surface, said layer of conductive material partially filling said contact hole;
- a second insulative layer disposed on said layer of conductive material in said contact hole, said second insulative layer filling said contact hole and leaving exposed a peripheral portion of said layer of conductive material on said sidewall surface;
- a layer of memory material formed over at least a portion of said exposed peripheral portion of said layer of conductive material;
- and
- a second conductive layer formed over said layer of memory material.
5 more elements
A non-volatile memory element comprising:
- a substrate having a conductive region;
- a first insulative layer formed on said conductive region;
- a contact hole formed in said first insulative layer and exposing at least a portion of said conductive region, said contact hole having a bottom surface and a sidewall surface;
- a layer of memory material disposed on said bottom surface and said sidewall surface, said layer of memory material partially filling said contact hole;
- a second insulative layer disposed on said layer of memory material in said contact hole, said second insulative layer filling said contact hole and leaving exposed a peripheral portion of said layer of memory material on said sidewall surface;
- and
- a layer of conductive material formed over at least a portion of said exposed peripheral portion of said layer of memory material.
4 more elements
A non-volatile memory element comprising:
- a substrate having a conductive region;
- a first insulative layer formed on said conductive region;
- a contact hole formed in said first insulative layer and exposing at least a portion of said conductive region, said contact hole having a bottom surface and a sidewall surface;
- a first layer of material disposed on said bottom surface and said sidewall surface, said first layer of material partially filling said contact hole, wherein said first layer of material comprises a memory material;
- a second insulative layer disposed on said first layer of material in said contact hole, said second insulative layer filling said contact hole and leaving exposed a peripheral portion of said first layer of material on said sidewall surface;
- and
- a second layer of material formed over at least a portion of said exposed peripheral portion of said first layer of material, said second layer of material comprising a conductive material.
4 more elements
Dependencies are inferred from the claim text.