Back to results
US 12,721,154 B2Granted
Semiconductor structure having verticle conductive graphene and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTsu-Chun Kuo, Shin-Yi Yang, Yu-Chen Chan, Shu-Wei Li, Meng-Pei Lu, Ming-Han Lee
Life of this patent
Estimating the term…
Abstract
A semiconductor structure includes a substrate, a dielectric layer, and a graphene conductive structure. The dielectric layer is disposed on the substrate, and has an inner lateral surface that is perpendicular to the substrate. The graphene conductive structure is formed in the dielectric layer and has at least one graphene layer extending in a direction parallel to the inner lateral surface of the dielectric layer.
Claims20
A method of making a semiconductor structure, comprising:
- forming a first dielectric layer on a substrate;
- forming an interconnect opening in the first dielectric layer, the interconnect opening being defined by an inner lateral surface of the first dielectric layer that is perpendicular to the substrate;
- forming a metal layer on the first dielectric layer and covering the inner lateral surface, the metal layer including Pd, Re, Ag, Ir, Hf, or combinations thereof, and
- forming a graphene conductive structure in the interconnect opening, the graphene conductive structure having at least one graphene layer extending in a direction parallel to the inner lateral surface,
- wherein the method further comprises:
- forming a conductive feature that surrounds the graphene conductive structure, wherein the conductive feature is spaced apart from the graphene conductive structure by the metal layer;
- and forming a barrier/liner layer which interfaces a lateral surface of the conductive feature and a bottom surface of each of the conductive feature, the metal layer, and the graphene conductive structure.
4 more elements
A method of making a semiconductor structure, comprising:
- forming a dielectric layer on a substrate;
- forming an interconnect opening in the dielectric layer, the interconnect opening being defined by an inner lateral surface of the dielectric layer that is perpendicular to the substrate;
- forming a metal layer covering the inner lateral surface, the metal layer including Pd, Re, Ag, Ir, Hf, or combinations thereof;
- and
- forming a graphene conductive structure in the interconnect opening such that the graphene conductive structure is formed on and surrounded by the metal layer, the graphene conductive structure including a plurality of graphene layers formed on the metal layer in a layer-by-layer manner and extending in a direction parallel to the inner lateral surface,
- wherein the method further comprises:
- forming a conductive feature that surrounds the graphene conductive structure;
- and forming a barrier/liner layer which interfaces a lateral surface of the conductive feature and a bottom surface of each of the conductive feature, the metal layer, and the graphene conductive structure.
5 more elements
A method of making a semiconductor structure, comprising:
- forming a dielectric layer on a substrate;
- forming an interconnect opening in the dielectric layer, the interconnect opening being defined by an inner lateral surface of the dielectric layer that is perpendicular to the substrate;
- forming a metal layer on the inner lateral surface, the metal layer including Pd, Re, Ag, Ir, Hf, or combinations thereof;
- forming a graphene conductive structure in the interconnect opening such that the graphene conductive structure is formed on and surrounded by the metal layer, the graphene conductive structure including a plurality of graphene layers formed on the metal layer in a layer-by-layer manner and extending in a direction parallel to the inner lateral surface;
- and
- doping the graphene conductive structure with an intercalating material,
- wherein the method further comprises:
- forming a conductive feature that surrounds the graphene conductive structure, and
- forming a barrier/liner layer that surrounds the conductive feature, the barrier/liner layer interfacing a lateral surface of the conductive feature and a bottom surface of each of the conductive feature, the metal layer, and the graphene conductive structure.
6 more elements
Dependencies are inferred from the claim text.