H10W 20/4403
Based on metals
Official title: {based on metals, e.g. alloys, metal silicides (H10W20/4484 takes precedence)}
H10W20/4403 (Based on metals) appears on 4,575 US grants and 4,820 published applications in this corpus.
Search patents in H10W- Granted patents
- 4,575
- Published applications
- 4,820
- Assignees
- 635
- Inventors
- 6,952
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 7 | 0 |
| 1978 | 2 | 0 |
| 1979 | 4 | 0 |
| 1980 | 2 | 0 |
| 1981 | 7 | 0 |
| 1982 | 3 | 0 |
| 1983 | 2 | 0 |
| 1984 | 3 | 0 |
| 1985 | 8 | 0 |
| 1986 | 7 | 0 |
| 1987 | 9 | 0 |
| 1988 | 11 | 0 |
| 1989 | 9 | 0 |
| 1990 | 19 | 0 |
| 1991 | 26 | 0 |
| 1992 | 21 | 0 |
| 1993 | 22 | 0 |
| 1994 | 26 | 0 |
| 1995 | 34 | 0 |
| 1996 | 38 | 0 |
| 1997 | 34 | 0 |
| 1998 | 39 | 0 |
| 1999 | 47 | 0 |
| 2000 | 69 | 0 |
| 2001 | 82 | 45 |
| 2002 | 100 | 114 |
| 2003 | 72 | 66 |
| 2004 | 62 | 77 |
| 2005 | 58 | 51 |
| 2006 | 48 | 58 |
| 2007 | 46 | 55 |
| 2008 | 38 | 46 |
| 2009 | 35 | 55 |
| 2010 | 47 | 54 |
| 2011 | 63 | 51 |
| 2012 | 26 | 67 |
| 2013 | 59 | 80 |
| 2014 | 111 | 199 |
| 2015 | 170 | 275 |
| 2016 | 278 | 291 |
| 2017 | 357 | 383 |
| 2018 | 353 | 372 |
| 2019 | 340 | 419 |
| 2020 | 389 | 383 |
| 2021 | 302 | 353 |
| 2022 | 248 | 343 |
| 2023 | 254 | 328 |
| 2024 | 239 | 264 |
| 2025 | 235 | 244 |
| 2026 | 113 | 147 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Composition and method for treating substrate6 Oct 2026US 12,753,342 B2FUJIFILM Corporation
- Integrated circuit (IC) device with hybrid metal layer6 Oct 2026US 12,757,708 B2Intel Corporation
- Semiconductor device and electronic system including the same6 Oct 2026US 12,757,720 B2Samsung Electronics Co., Ltd.
- Semiconductor structure and manufacturing method thereof29 Sep 2026US 12,751,258 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Technologies for aligned vias29 Sep 2026US 12,751,262 B2Intel Corporation
- Interconnect structure and method of forming same8 Oct 2026US 2026/0306859 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device including a self-formed barrier metal layer8 Oct 2026US 2026/0314351 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Package structure and method for fabricating the same8 Oct 2026US 2026/0314354 A1National Yang Ming.Chiao Tung University
- Conductive structures and methods of forming the same8 Oct 2026US 2026/0314355 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method to improve interconnect coefficient of thermal expansion8 Oct 2026US 2026/0314357 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Production of elemental thin films using a boron-containing reducing agent809US 6,475,276 B1ASM Microchemistry Oy · 2002
- Method of producing titanium nitride MOS device gate electrode640US 4,570,328 AMotorola, Inc. · 1986
- Plated copper interconnect structure621US 5,969,422 AAdvanced Micro Devices, Inc. · 1999
- Method and structure to improve reliability of copper interconnects562US 7,129,165 B2ASM Nutool, Inc. · 2006
- Method of manufacturing a contact interconnection layer containing a metal and nitrogen by atomic layer deposition for deep sub-micron semiconductor technology532US 7,235,482 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2007