H10W 20/4432
The principal metal being a noble metal
Official title: {the principal metal being a noble metal, e.g. gold}
H10W20/4432 (The principal metal being a noble metal) appears on 670 US grants and 684 published applications in this corpus.
Search patents in H10W- Granted patents
- 670
- Published applications
- 684
- Assignees
- 176
- Inventors
- 1,223
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 2 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 2 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 3 | 0 |
| 1988 | 1 | 0 |
| 1989 | 2 | 0 |
| 1990 | 2 | 0 |
| 1991 | 5 | 0 |
| 1992 | 3 | 0 |
| 1993 | 7 | 0 |
| 1994 | 5 | 0 |
| 1995 | 8 | 0 |
| 1996 | 11 | 0 |
| 1997 | 6 | 0 |
| 1998 | 12 | 0 |
| 1999 | 9 | 0 |
| 2000 | 9 | 0 |
| 2001 | 12 | 7 |
| 2002 | 12 | 12 |
| 2003 | 8 | 7 |
| 2004 | 9 | 9 |
| 2005 | 7 | 7 |
| 2006 | 8 | 9 |
| 2007 | 7 | 5 |
| 2008 | 4 | 5 |
| 2009 | 3 | 3 |
| 2010 | 7 | 4 |
| 2011 | 6 | 9 |
| 2012 | 2 | 12 |
| 2013 | 8 | 7 |
| 2014 | 14 | 19 |
| 2015 | 18 | 24 |
| 2016 | 20 | 28 |
| 2017 | 49 | 61 |
| 2018 | 50 | 54 |
| 2019 | 50 | 49 |
| 2020 | 50 | 55 |
| 2021 | 40 | 68 |
| 2022 | 44 | 49 |
| 2023 | 38 | 67 |
| 2024 | 51 | 47 |
| 2025 | 37 | 43 |
| 2026 | 24 | 24 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Composition and method for treating substrate6 Oct 2026US 12,753,342 B2FUJIFILM Corporation
- Integrated circuit (IC) device with hybrid metal layer6 Oct 2026US 12,757,708 B2Intel Corporation
- Semiconductor structure and manufacturing method thereof29 Sep 2026US 12,751,258 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Metallization stack and method of manufacturing the same, and electronic device including metallization stack29 Sep 2026US 12,751,275 B2Institute of Microelectronics, Chinese Academy of Sciences
- Interconnect structure and electronic device including the same29 Sep 2026US 12,751,281 B2Samsung Electronics Co., Ltd.
- Semiconductor device including a self-formed barrier metal layer8 Oct 2026US 2026/0314351 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method thereof24 Sep 2026US 2026/0293658 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Composition, method of preparing fine pattern by using the same, and method of manufacturing semiconductor device by using the same17 Sep 2026US 2026/0275125 A1Samsung Electronics Co., Ltd.
- Passivation of metal structures for harsh environments20 Aug 2026US 2026/0247880 A1X-FAB Global Services GmbH
- Halide-free co-reactants for ruthenium film deposition6 Aug 2026US 2026/0226611 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Production of elemental thin films using a boron-containing reducing agent809US 6,475,276 B1ASM Microchemistry Oy · 2002
- Production of elemental films using a boron-containing reducing agent448US 7,144,809 B2ASM International N.V. · 2006
- Method for bottomless deposition of barrier layers in integrated circuit metallization schemes365US 6,391,785 B1ASM Microchemistry Oy · 2002
- Production of elemental thin films using a boron-containing reducing agent346US 6,821,889 B2ASM International N.V. · 2004
- Method for forming interconnections for semiconductor fabrication and semiconductor device having such interconnections290US 5,739,579 AIntel Corporation · 1998