Passivation of metal structures for harsh environments
AssigneeX-FAB Global Services GmbH
InventorsSophia DEMPWOLF, Roy KNECHTEL
Life of this patent
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Abstract
A method of manufacturing a semiconductor structure includes providing a substrate, forming an active region in the substrate, and depositing and patterning a metal layer to form metal lines and one or more contacts connected to the active region. The method also includes depositing a silicon oxide layer by plasma enhanced chemical vapor deposition, PECVD, so as to cover at least a part of the metal layer and depositing a silicon nitride layer by low pressure chemical vapor deposition, LPCVD, so as to cover at least a part of the silicon oxide layer.
Claims25
A method of manufacturing a semiconductor structure comprising:
- providing a substrate;
- forming an active region in said substrate;
- depositing and patterning a metal layer to form metal lines and one or more contacts connected to said active region;
- depositing a silicon oxide layer by plasma enhanced chemical vapor deposition, PECVD, so as to cover at least a part of said metal layer;
- densification annealing of said silicon oxide layer;
- and
- after said densification annealing, depositing a silicon nitride layer by low pressure chemical vapor deposition, LPCVD, so as to cover at least a part of said silicon oxide layer.
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A semiconductor structure comprising:
- a substrate;
- an active region in said substrate;
- a metal layer comprising metal lines and one or more contacts connected to said active region;
- a plasma enhanced chemical vapor deposition, PECVD, silicon oxide layer covering at least a part of said metal layer, wherein said PECVD silicon oxide layer is a densified oxide layer;
- and
- a low pressure chemical vapor deposition, LPCVD, silicon nitride layer covering at least a part of said PECVD silicon oxide layer.
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Dependencies are inferred from the claim text.