H10W 20/4435
Noble-metal alloys
Official title: {Noble-metal alloys}
H10W20/4435 (Noble-metal alloys) appears on 121 US grants and 96 published applications in this corpus.
Search patents in H10W- Granted patents
- 121
- Published applications
- 96
- Assignees
- 50
- Inventors
- 232
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 3 | 0 |
| 1996 | 4 | 0 |
| 1997 | 3 | 0 |
| 1998 | 5 | 0 |
| 1999 | 5 | 0 |
| 2000 | 4 | 0 |
| 2001 | 4 | 0 |
| 2002 | 3 | 3 |
| 2003 | 2 | 2 |
| 2004 | 3 | 4 |
| 2005 | 2 | 4 |
| 2006 | 3 | 3 |
| 2007 | 4 | 3 |
| 2008 | 2 | 0 |
| 2009 | 1 | 2 |
| 2010 | 2 | 0 |
| 2011 | 2 | 3 |
| 2012 | 1 | 4 |
| 2013 | 2 | 1 |
| 2014 | 4 | 6 |
| 2015 | 3 | 3 |
| 2016 | 5 | 7 |
| 2017 | 7 | 6 |
| 2018 | 10 | 9 |
| 2019 | 8 | 3 |
| 2020 | 5 | 6 |
| 2021 | 1 | 2 |
| 2022 | 3 | 4 |
| 2023 | 2 | 3 |
| 2024 | 0 | 2 |
| 2025 | 3 | 9 |
| 2026 | 6 | 7 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor structure and manufacturing method thereof29 Sep 2026US 12,751,258 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit devices including metal structures having a curved interface and methods of forming the same11 Aug 2026US 12,707,946 B2Samsung Electronics Co., Ltd.
- Semiconductor device including a self-formed barrier metal layer30 Jun 2026US 12,672,527 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Interconnect structure16 Jun 2026US 12,660,593 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Liner-free conductive structures24 Mar 2026US 12,588,268 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device including a self-formed barrier metal layer8 Oct 2026US 2026/0314351 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Liner-free conductive structures18 Jun 2026US 2026/0173485 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method of manufacturing light-emitting device and light-emitting device18 Jun 2026US 2026/0173606 A1Nichia Corporation
- Metal interconnect structures and methods thereof7 May 2026US 2026/0130206 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Interconnect structure including anisotropic transport material and method for manufacturing the same30 Apr 2026US 2026/0123392 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Semiconductor device having a wiring layer with a barrier layer91US 5,592,024 AKabushiki Kaisha Toshiba · 1997
- Multi-level conductor process in VLSI fabrication utilizing an air bridge76US 5,413,962 AUnited Microelectronics Corp. · 1995
- High aspect ratio low resistivity lines/vias by surface diffusion65US 5,897,370 AInternational Business Machines Corporation · 1999
- Semiconductor device and method of manufacturing the same64US 5,763,953 AKabushiki Kaisha Toshiba · 1998
- Circuitry comprising roughened platinum layers, platinum-containing materials, capacitors comprising roughened platinum layers, methods forming roughened layers of platinum, and methods of forming capacitors52US 5,990,559 AMicron Technology, Inc. · 1999